30-Gb/s Optical Link Combining Heterogeneously Integrated III-V/Si Photonics With 32-nm CMOS Circuits

We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both...

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Veröffentlicht in:Journal of lightwave technology 2015-02, Vol.33 (3), p.657-662
Hauptverfasser: Dupuis, Nicolas, Lee, Benjamin G., Proesel, Jonathan E., Rylyakov, Alexander, Rimolo-Donadio, Renato, Baks, Christian W., Ardey, Abhijeet, Schow, Clint L., Ramaswamy, Anand, Roth, Jonathan E., Guzzon, Robert S., Koch, Brian, Sparacin, Daniel K., Fish, Greg A.
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container_end_page 662
container_issue 3
container_start_page 657
container_title Journal of lightwave technology
container_volume 33
creator Dupuis, Nicolas
Lee, Benjamin G.
Proesel, Jonathan E.
Rylyakov, Alexander
Rimolo-Donadio, Renato
Baks, Christian W.
Ardey, Abhijeet
Schow, Clint L.
Ramaswamy, Anand
Roth, Jonathan E.
Guzzon, Robert S.
Koch, Brian
Sparacin, Daniel K.
Fish, Greg A.
description We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III-V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.
doi_str_mv 10.1109/JLT.2014.2364551
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subjects CMOS integrated circuits
Optical fiber communication
Optical receivers
Optical transmitters
Optical waveguides
Silicon photonics
title 30-Gb/s Optical Link Combining Heterogeneously Integrated III-V/Si Photonics With 32-nm CMOS Circuits
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