High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process

This letter presents three low-operating-voltage silicon-based light-emitting devices (Si-LEDs) designed and made in a commercial standard 0.18-μm CMOS process without any modification. The Si-LEDs with a new threeterminal and wedge-shaped forward-biased carrier-injection-type p + -n junction struct...

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Veröffentlicht in:	IEEE photonics technology letters 2015-01, Vol.27 (2), p.121-124
Hauptverfasser:	Xie, Rong, Mao, Luhong, Guo, Weilian, Xie, Sheng, Zhang, Shilin, Han, Lei, Zhao, Fan
Format:	Artikel
Sprache:	eng
Schlagworte:	Complementary metal-oxide-semiconductor (CMOS) process without any modification Density measurement Electric fields forward-biased carrier-injection-type Junctions Light emitting diodes optical power density Optical saturation p+-n junction Silicon silicon-based light-emitting devices (Si-LEDs) Stimulated emission
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