High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process
This letter presents three low-operating-voltage silicon-based light-emitting devices (Si-LEDs) designed and made in a commercial standard 0.18-μm CMOS process without any modification. The Si-LEDs with a new threeterminal and wedge-shaped forward-biased carrier-injection-type p + -n junction struct...
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| Veröffentlicht in: | IEEE photonics technology letters 2015-01, Vol.27 (2), p.121-124 |
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| container_end_page | 124 |
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| container_title | IEEE photonics technology letters |
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| creator | Xie, Rong Mao, Luhong Guo, Weilian Xie, Sheng Zhang, Shilin Han, Lei Zhao, Fan |
| description | This letter presents three low-operating-voltage silicon-based light-emitting devices (Si-LEDs) designed and made in a commercial standard 0.18-μm CMOS process without any modification. The Si-LEDs with a new threeterminal and wedge-shaped forward-biased carrier-injection-type p + -n junction structure, have high optical powers. The output power increases by two orders of magnitude up to 1.78 μW without saturation when the forward current is increased from 20 mA to 200 mA. The light-emitting area is the n-type drift region between the n + region and p + region. When the forward current increases to 200 mA, the optical power density exceeds 30 nW · μm -2 the power conversion efficiency and external quantum efficiency are ~2 × 10 -6 and 8.3 × 10 -6 , respectively, higher than all other forward-biased Si-LEDs previously reported to have used CMOS processes without any modification. |
| doi_str_mv | 10.1109/LPT.2014.2362983 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_6923455</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6923455</ieee_id><sourcerecordid>3532200941</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-73f416e7b0f0b806cbfaefc4997b8d5b7b8fc0923ebebc819de151ee0aba4ec63</originalsourceid><addsrcrecordid>eNo9kM1LAzEQxYMoWKt3wUvA89bMJvuRo9bWCisttJ5Dkp3VlLpbky2l_70pLV5mHszvzQyPkHtgIwAmn6rFapQyEKOU56ks-QUZgBSQMCjEZdQsagCeXZObENYskhkXAzKfua9vOt_2zuoNXXR79PQV2-D6A512fq99nbw4HbCmS7dxtmtpNXkN1LV02eu2jnM6_pgv6cJ3FkO4JVeN3gS8O_ch-ZxOVuNZUs3f3sfPVWJTCX1S8EZAjoVhDTMly61pNDZWSFmYss5MrI1lMuVo0NgSZI2QASLTRgu0OR-Sx9Pere9-dxh6te52vo0nFeS8FAWIgkeKnSjruxA8Nmrr3Y_2BwVMHWNTMTZ1jE2dY4uWh5PFIeI_nsdXRJbxPxQ2aHE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1638471473</pqid></control><display><type>article</type><title>High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process</title><source>IEEE/IET Electronic Library</source><creator>Xie, Rong ; Mao, Luhong ; Guo, Weilian ; Xie, Sheng ; Zhang, Shilin ; Han, Lei ; Zhao, Fan</creator><creatorcontrib>Xie, Rong ; Mao, Luhong ; Guo, Weilian ; Xie, Sheng ; Zhang, Shilin ; Han, Lei ; Zhao, Fan</creatorcontrib><description>This letter presents three low-operating-voltage silicon-based light-emitting devices (Si-LEDs) designed and made in a commercial standard 0.18-μm CMOS process without any modification. The Si-LEDs with a new threeterminal and wedge-shaped forward-biased carrier-injection-type p + -n junction structure, have high optical powers. The output power increases by two orders of magnitude up to 1.78 μW without saturation when the forward current is increased from 20 mA to 200 mA. The light-emitting area is the n-type drift region between the n + region and p + region. When the forward current increases to 200 mA, the optical power density exceeds 30 nW · μm -2 the power conversion efficiency and external quantum efficiency are ~2 × 10 -6 and 8.3 × 10 -6 , respectively, higher than all other forward-biased Si-LEDs previously reported to have used CMOS processes without any modification.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2014.2362983</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Complementary metal-oxide-semiconductor (CMOS) process without any modification ; Density measurement ; Electric fields ; forward-biased carrier-injection-type ; Junctions ; Light emitting diodes ; optical power density ; Optical saturation ; p+-n junction ; Silicon ; silicon-based light-emitting devices (Si-LEDs) ; Stimulated emission</subject><ispartof>IEEE photonics technology letters, 2015-01, Vol.27 (2), p.121-124</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2015</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-73f416e7b0f0b806cbfaefc4997b8d5b7b8fc0923ebebc819de151ee0aba4ec63</citedby><cites>FETCH-LOGICAL-c291t-73f416e7b0f0b806cbfaefc4997b8d5b7b8fc0923ebebc819de151ee0aba4ec63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6923455$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6923455$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xie, Rong</creatorcontrib><creatorcontrib>Mao, Luhong</creatorcontrib><creatorcontrib>Guo, Weilian</creatorcontrib><creatorcontrib>Xie, Sheng</creatorcontrib><creatorcontrib>Zhang, Shilin</creatorcontrib><creatorcontrib>Han, Lei</creatorcontrib><creatorcontrib>Zhao, Fan</creatorcontrib><title>High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>This letter presents three low-operating-voltage silicon-based light-emitting devices (Si-LEDs) designed and made in a commercial standard 0.18-μm CMOS process without any modification. The Si-LEDs with a new threeterminal and wedge-shaped forward-biased carrier-injection-type p + -n junction structure, have high optical powers. The output power increases by two orders of magnitude up to 1.78 μW without saturation when the forward current is increased from 20 mA to 200 mA. The light-emitting area is the n-type drift region between the n + region and p + region. When the forward current increases to 200 mA, the optical power density exceeds 30 nW · μm -2 the power conversion efficiency and external quantum efficiency are ~2 × 10 -6 and 8.3 × 10 -6 , respectively, higher than all other forward-biased Si-LEDs previously reported to have used CMOS processes without any modification.</description><subject>Complementary metal-oxide-semiconductor (CMOS) process without any modification</subject><subject>Density measurement</subject><subject>Electric fields</subject><subject>forward-biased carrier-injection-type</subject><subject>Junctions</subject><subject>Light emitting diodes</subject><subject>optical power density</subject><subject>Optical saturation</subject><subject>p+-n junction</subject><subject>Silicon</subject><subject>silicon-based light-emitting devices (Si-LEDs)</subject><subject>Stimulated emission</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1LAzEQxYMoWKt3wUvA89bMJvuRo9bWCisttJ5Dkp3VlLpbky2l_70pLV5mHszvzQyPkHtgIwAmn6rFapQyEKOU56ks-QUZgBSQMCjEZdQsagCeXZObENYskhkXAzKfua9vOt_2zuoNXXR79PQV2-D6A512fq99nbw4HbCmS7dxtmtpNXkN1LV02eu2jnM6_pgv6cJ3FkO4JVeN3gS8O_ch-ZxOVuNZUs3f3sfPVWJTCX1S8EZAjoVhDTMly61pNDZWSFmYss5MrI1lMuVo0NgSZI2QASLTRgu0OR-Sx9Pere9-dxh6te52vo0nFeS8FAWIgkeKnSjruxA8Nmrr3Y_2BwVMHWNTMTZ1jE2dY4uWh5PFIeI_nsdXRJbxPxQ2aHE</recordid><startdate>20150115</startdate><enddate>20150115</enddate><creator>Xie, Rong</creator><creator>Mao, Luhong</creator><creator>Guo, Weilian</creator><creator>Xie, Sheng</creator><creator>Zhang, Shilin</creator><creator>Han, Lei</creator><creator>Zhao, Fan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20150115</creationdate><title>High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process</title><author>Xie, Rong ; Mao, Luhong ; Guo, Weilian ; Xie, Sheng ; Zhang, Shilin ; Han, Lei ; Zhao, Fan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-73f416e7b0f0b806cbfaefc4997b8d5b7b8fc0923ebebc819de151ee0aba4ec63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Complementary metal-oxide-semiconductor (CMOS) process without any modification</topic><topic>Density measurement</topic><topic>Electric fields</topic><topic>forward-biased carrier-injection-type</topic><topic>Junctions</topic><topic>Light emitting diodes</topic><topic>optical power density</topic><topic>Optical saturation</topic><topic>p+-n junction</topic><topic>Silicon</topic><topic>silicon-based light-emitting devices (Si-LEDs)</topic><topic>Stimulated emission</topic><toplevel>online_resources</toplevel><creatorcontrib>Xie, Rong</creatorcontrib><creatorcontrib>Mao, Luhong</creatorcontrib><creatorcontrib>Guo, Weilian</creatorcontrib><creatorcontrib>Xie, Sheng</creatorcontrib><creatorcontrib>Zhang, Shilin</creatorcontrib><creatorcontrib>Han, Lei</creatorcontrib><creatorcontrib>Zhao, Fan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) Online</collection><collection>IEEE/IET Electronic Library</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xie, Rong</au><au>Mao, Luhong</au><au>Guo, Weilian</au><au>Xie, Sheng</au><au>Zhang, Shilin</au><au>Han, Lei</au><au>Zhao, Fan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2015-01-15</date><risdate>2015</risdate><volume>27</volume><issue>2</issue><spage>121</spage><epage>124</epage><pages>121-124</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>This letter presents three low-operating-voltage silicon-based light-emitting devices (Si-LEDs) designed and made in a commercial standard 0.18-μm CMOS process without any modification. The Si-LEDs with a new threeterminal and wedge-shaped forward-biased carrier-injection-type p + -n junction structure, have high optical powers. The output power increases by two orders of magnitude up to 1.78 μW without saturation when the forward current is increased from 20 mA to 200 mA. The light-emitting area is the n-type drift region between the n + region and p + region. When the forward current increases to 200 mA, the optical power density exceeds 30 nW · μm -2 the power conversion efficiency and external quantum efficiency are ~2 × 10 -6 and 8.3 × 10 -6 , respectively, higher than all other forward-biased Si-LEDs previously reported to have used CMOS processes without any modification.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2014.2362983</doi><tpages>4</tpages></addata></record> |
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| source | IEEE/IET Electronic Library |
| subjects | Complementary metal-oxide-semiconductor (CMOS) process without any modification Density measurement Electric fields forward-biased carrier-injection-type Junctions Light emitting diodes optical power density Optical saturation p+-n junction Silicon silicon-based light-emitting devices (Si-LEDs) Stimulated emission |
| title | High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T17%3A19%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20Optical%20Power%20Density%20Forward-Biased%20Silicon%20LEDs%20in%20Standard%20CMOS%20Process&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Xie,%20Rong&rft.date=2015-01-15&rft.volume=27&rft.issue=2&rft.spage=121&rft.epage=124&rft.pages=121-124&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/LPT.2014.2362983&rft_dat=%3Cproquest_RIE%3E3532200941%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1638471473&rft_id=info:pmid/&rft_ieee_id=6923455&rfr_iscdi=true |