Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications
This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near s...
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| Veröffentlicht in: | Journal of display technology 2015-06, Vol.11 (6), p.506-511 |
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| container_title | Journal of display technology |
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| creator | Hsu, Hsiao-Hsuan Chiou, Ping Cheng, Chun-Hu Yen, Shiang-Shiou Tung, Chien-Hung Chang, Chun-Yen Lai, Yu-Chien Li, Hung-Wei Chang, Chih-Pang Lu, Hsueh-Hsing Chuang, Ching-Sang Lin, Yu-Hsin |
| description | This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of , a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade , and a high mobility of 13.7 cm 2 /V·s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication. |
| doi_str_mv | 10.1109/JDT.2014.2353091 |
| format | Article |
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Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of , a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade , and a high mobility of 13.7 cm 2 /V·s. 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Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of , a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade , and a high mobility of 13.7 cm 2 /V·s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.</description><subject>Aluminum oxide</subject><subject>Crystalline phase</subject><subject>Dielectrics</subject><subject>indium-gallium-zinc oxide (IGZO)</subject><subject>Iron</subject><subject>Logic gates</subject><subject>Substrates</subject><subject>Thin film transistors</subject><subject>thin-film transistor (TFT)</subject><subject>titanium oxide</subject><issn>1551-319X</issn><issn>1558-9323</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kFtLwzAcxYMoOKfvgi_5Ap259JI-jurmZDDECuJL-S9NWLRNStLC9u3t3PDpHDiXhx9C95TMKCX54-tTOWOExjPGE05yeoEmNElElHPGL_88jTjNP6_RTQjfhHCRinSC-nnrfLdzQ8Cl6cGaocWbvakVfletkc7Wg-ydD9hZ_DZAMFHhD6GHJlqbH4VXdglfdoOLHVirmoC187jcGYsXpmlx6cEGE8YDPO-6xkjojbPhFl1paIK6O-sUfSyey-IlWm-Wq2K-jiSjaR_xWola57GsM6Eh1luaUpFJoGzMQWsqt0nOJShgKhWM1VyOjQQyrVkmasWniJx-pXcheKWrzpsW_KGipDpSq0Zq1ZFadaY2Th5OE6OU-q-nQmQ8ifkvoANrwQ</recordid><startdate>201506</startdate><enddate>201506</enddate><creator>Hsu, Hsiao-Hsuan</creator><creator>Chiou, Ping</creator><creator>Cheng, Chun-Hu</creator><creator>Yen, Shiang-Shiou</creator><creator>Tung, Chien-Hung</creator><creator>Chang, Chun-Yen</creator><creator>Lai, Yu-Chien</creator><creator>Li, Hung-Wei</creator><creator>Chang, Chih-Pang</creator><creator>Lu, Hsueh-Hsing</creator><creator>Chuang, Ching-Sang</creator><creator>Lin, Yu-Hsin</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201506</creationdate><title>Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications</title><author>Hsu, Hsiao-Hsuan ; Chiou, Ping ; Cheng, Chun-Hu ; Yen, Shiang-Shiou ; Tung, Chien-Hung ; Chang, Chun-Yen ; Lai, Yu-Chien ; Li, Hung-Wei ; Chang, Chih-Pang ; Lu, Hsueh-Hsing ; Chuang, Ching-Sang ; Lin, Yu-Hsin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c216t-3de8df94cd78fa4fb16187ca12c21aff1cb593caea2e6822d3c1615a7ff278de3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Aluminum oxide</topic><topic>Crystalline phase</topic><topic>Dielectrics</topic><topic>indium-gallium-zinc oxide (IGZO)</topic><topic>Iron</topic><topic>Logic gates</topic><topic>Substrates</topic><topic>Thin film transistors</topic><topic>thin-film transistor (TFT)</topic><topic>titanium oxide</topic><toplevel>online_resources</toplevel><creatorcontrib>Hsu, Hsiao-Hsuan</creatorcontrib><creatorcontrib>Chiou, Ping</creatorcontrib><creatorcontrib>Cheng, Chun-Hu</creatorcontrib><creatorcontrib>Yen, Shiang-Shiou</creatorcontrib><creatorcontrib>Tung, Chien-Hung</creatorcontrib><creatorcontrib>Chang, Chun-Yen</creatorcontrib><creatorcontrib>Lai, Yu-Chien</creatorcontrib><creatorcontrib>Li, Hung-Wei</creatorcontrib><creatorcontrib>Chang, Chih-Pang</creatorcontrib><creatorcontrib>Lu, Hsueh-Hsing</creatorcontrib><creatorcontrib>Chuang, Ching-Sang</creatorcontrib><creatorcontrib>Lin, Yu-Hsin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>Journal of display technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hsu, Hsiao-Hsuan</au><au>Chiou, Ping</au><au>Cheng, Chun-Hu</au><au>Yen, Shiang-Shiou</au><au>Tung, Chien-Hung</au><au>Chang, Chun-Yen</au><au>Lai, Yu-Chien</au><au>Li, Hung-Wei</au><au>Chang, Chih-Pang</au><au>Lu, Hsueh-Hsing</au><au>Chuang, Ching-Sang</au><au>Lin, Yu-Hsin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications</atitle><jtitle>Journal of display technology</jtitle><stitle>JDT</stitle><date>2015-06</date><risdate>2015</risdate><volume>11</volume><issue>6</issue><spage>506</spage><epage>511</epage><pages>506-511</pages><issn>1551-319X</issn><eissn>1558-9323</eissn><coden>IJDTAL</coden><abstract>This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of , a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade , and a high mobility of 13.7 cm 2 /V·s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.</abstract><pub>IEEE</pub><doi>10.1109/JDT.2014.2353091</doi><tpages>6</tpages></addata></record> |
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| subjects | Aluminum oxide Crystalline phase Dielectrics indium-gallium-zinc oxide (IGZO) Iron Logic gates Substrates Thin film transistors thin-film transistor (TFT) titanium oxide |
| title | Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications |
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