Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS

In this paper, by means of simulation, we have studied the implications of using channel doping to control the threshold voltage and the leakage current in bulk silicon FinFETs suitable for the 10-nm CMOS technology generation. The channel doping level of high-performance FinFETs designed for 100-nA...

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Veröffentlicht in:	IEEE transactions on electron devices 2014-10, Vol.61 (10), p.3372-3378
Hauptverfasser:	Adamu-Lema, Fikru, Xingsheng Wang, Amoroso, Salvatore Maria, Riddet, Craig, Binjie Cheng, Shifren, Lucian, Aitken, Robert, Sinha, Saurahb, Yeric, Greg, Asenov, Asen
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomistic doping Channels CMOS Computer simulation continuous doping density gradient Doping Electromagnetic compatibility FinFETs Leakage current Monte Carlo methods random dopants Roughness Semiconductor device modeling Semiconductor process modeling Semiconductors statistical simulations Threshold voltage
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