Shaping High-Power IGBT Switching Transitions by Active Voltage Control for Reduced EMI Generation

High-performance power switching devices [insulated-gate bipolar transistors (IGBTs)] realize high-performance power converters. Unfortunately, with a high switching speed of the IGBT-freewheel diode chopper cell, the circuit becomes intrinsic sources of high-level electromagnetic interference (EMI)...

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Veröffentlicht in:IEEE transactions on industry applications 2015-03, Vol.51 (2), p.1669-1677
Hauptverfasser: Yang, Xin, Yuan, Ye, Zhang, Xueqiang, Palmer, Patrick R.
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Sprache:eng
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