Shaping High-Power IGBT Switching Transitions by Active Voltage Control for Reduced EMI Generation
High-performance power switching devices [insulated-gate bipolar transistors (IGBTs)] realize high-performance power converters. Unfortunately, with a high switching speed of the IGBT-freewheel diode chopper cell, the circuit becomes intrinsic sources of high-level electromagnetic interference (EMI)...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on industry applications 2015-03, Vol.51 (2), p.1669-1677 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!