Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure
In this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-volta...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2014-11, Vol.2 (6), p.179-181 |
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| container_end_page | 181 |
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| container_issue | 6 |
| container_start_page | 179 |
| container_title | IEEE journal of the Electron Devices Society |
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| creator | Landi, G. Fahrner, W. R. Concilio, S. Sessa, L. Neitzert, H. C. |
| description | In this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-voltage characteristics and capacitance voltage measurements have been used for the determination of the organic layer dielectric and hole conduction parameters. |
| doi_str_mv | 10.1109/JEDS.2014.2346584 |
| format | Article |
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| ispartof | IEEE journal of the Electron Devices Society, 2014-11, Vol.2 (6), p.179-181 |
| issn | 2168-6734 2168-6734 |
| language | eng |
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| source | DOAJ Directory of Open Access Journals; IEEE Xplore Open Access Journals; EZB Electronic Journals Library |
| subjects | Capacitance-voltage characteristics Charge carrier mobility Crystalline materials Dielectric constant Electron traps Silicon |
| title | Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure |
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