A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions

Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfer-torque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for...

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Veröffentlicht in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2014-09, Vol.61 (9), p.2634-2643
Hauptverfasser: Vatankhahghadim, Aynaz, Huda, Safeen, Sheikholeslami, Ali
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creator Vatankhahghadim, Aynaz
Huda, Safeen
Sheikholeslami, Ali
description Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfer-torque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for their capabilities and limitations. Furthermore, a Verilog-A model is developed to predict dynamic characteristics of the MTJ. These models are used in simulating a prototype circuit to illustrate their strengths and weaknesses.
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subjects Circuits
Computer simulation
Design engineering
Dynamic models
Dynamical systems
Equations
Integrated circuit modeling
Magnetic tunnel junction (MTJ)
Magnetic tunneling
Magnetization
Magnetoresistive random access memory
magnetoresistive random-access memory (MRAM)
Mathematical model
Mathematical models
modeling
spin-transfer-torque (STT)
Switches
Tunnel junctions
Vectors
title A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions
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