A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions
Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfer-torque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for...
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Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2014-09, Vol.61 (9), p.2634-2643 |
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creator | Vatankhahghadim, Aynaz Huda, Safeen Sheikholeslami, Ali |
description | Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfer-torque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for their capabilities and limitations. Furthermore, a Verilog-A model is developed to predict dynamic characteristics of the MTJ. These models are used in simulating a prototype circuit to illustrate their strengths and weaknesses. |
doi_str_mv | 10.1109/TCSI.2014.2332247 |
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fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_6848862</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6848862</ieee_id><sourcerecordid>1620039075</sourcerecordid><originalsourceid>FETCH-LOGICAL-c402t-607f7f1556b89862be711482529aedef029b77aee3051eda2c42e98f33d33e1a3</originalsourceid><addsrcrecordid>eNpdkD1PwzAQhiMEEqXwAxCLJRaWFH8ksT1WER9FLQwNs-Uml8pVahc7Qeq_x1ERA9Pd8Lyn594kuSV4RgiWj1W5XswoJtmMMkZpxs-SCclzkWKBi_Nxz2QqGBWXyVUIO4ypxIxMkvc5Wg_-G47IWVQaXw-mRyvXQGfsFrkWrQ_GppXXNrTg08r5rwHQSm8t9KZG1WAtdOhtsHVvnA3XyUWruwA3v3OafD4_VeVruvx4WZTzZVpnmPZpgXnL2-hXbIQUBd0AJyQTNKdSQwNttNtwrgEYzgk0mtYZBSlaxhrGgGg2TR5Odw_eRaHQq70JNXSdtuCGoEhBMWYS8zyi9__QnRu8jXYqCnCZEyKKSJETVXsXgodWHbzZa39UBKuxYTU2rMaG1W_DMXN3yhgA-OMLkYn4EvsBlP910w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1557951186</pqid></control><display><type>article</type><title>A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions</title><source>IEEE Electronic Library (IEL)</source><creator>Vatankhahghadim, Aynaz ; Huda, Safeen ; Sheikholeslami, Ali</creator><creatorcontrib>Vatankhahghadim, Aynaz ; Huda, Safeen ; Sheikholeslami, Ali</creatorcontrib><description>Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfer-torque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for their capabilities and limitations. Furthermore, a Verilog-A model is developed to predict dynamic characteristics of the MTJ. These models are used in simulating a prototype circuit to illustrate their strengths and weaknesses.</description><identifier>ISSN: 1549-8328</identifier><identifier>EISSN: 1558-0806</identifier><identifier>DOI: 10.1109/TCSI.2014.2332247</identifier><identifier>CODEN: ITCSCH</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuits ; Computer simulation ; Design engineering ; Dynamic models ; Dynamical systems ; Equations ; Integrated circuit modeling ; Magnetic tunnel junction (MTJ) ; Magnetic tunneling ; Magnetization ; Magnetoresistive random access memory ; magnetoresistive random-access memory (MRAM) ; Mathematical model ; Mathematical models ; modeling ; spin-transfer-torque (STT) ; Switches ; Tunnel junctions ; Vectors</subject><ispartof>IEEE transactions on circuits and systems. I, Regular papers, 2014-09, Vol.61 (9), p.2634-2643</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Sep 2014</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c402t-607f7f1556b89862be711482529aedef029b77aee3051eda2c42e98f33d33e1a3</citedby><cites>FETCH-LOGICAL-c402t-607f7f1556b89862be711482529aedef029b77aee3051eda2c42e98f33d33e1a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6848862$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6848862$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Vatankhahghadim, Aynaz</creatorcontrib><creatorcontrib>Huda, Safeen</creatorcontrib><creatorcontrib>Sheikholeslami, Ali</creatorcontrib><title>A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions</title><title>IEEE transactions on circuits and systems. I, Regular papers</title><addtitle>TCSI</addtitle><description>Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfer-torque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for their capabilities and limitations. Furthermore, a Verilog-A model is developed to predict dynamic characteristics of the MTJ. These models are used in simulating a prototype circuit to illustrate their strengths and weaknesses.</description><subject>Circuits</subject><subject>Computer simulation</subject><subject>Design engineering</subject><subject>Dynamic models</subject><subject>Dynamical systems</subject><subject>Equations</subject><subject>Integrated circuit modeling</subject><subject>Magnetic tunnel junction (MTJ)</subject><subject>Magnetic tunneling</subject><subject>Magnetization</subject><subject>Magnetoresistive random access memory</subject><subject>magnetoresistive random-access memory (MRAM)</subject><subject>Mathematical model</subject><subject>Mathematical models</subject><subject>modeling</subject><subject>spin-transfer-torque (STT)</subject><subject>Switches</subject><subject>Tunnel junctions</subject><subject>Vectors</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkD1PwzAQhiMEEqXwAxCLJRaWFH8ksT1WER9FLQwNs-Uml8pVahc7Qeq_x1ERA9Pd8Lyn594kuSV4RgiWj1W5XswoJtmMMkZpxs-SCclzkWKBi_Nxz2QqGBWXyVUIO4ypxIxMkvc5Wg_-G47IWVQaXw-mRyvXQGfsFrkWrQ_GppXXNrTg08r5rwHQSm8t9KZG1WAtdOhtsHVvnA3XyUWruwA3v3OafD4_VeVruvx4WZTzZVpnmPZpgXnL2-hXbIQUBd0AJyQTNKdSQwNttNtwrgEYzgk0mtYZBSlaxhrGgGg2TR5Odw_eRaHQq70JNXSdtuCGoEhBMWYS8zyi9__QnRu8jXYqCnCZEyKKSJETVXsXgodWHbzZa39UBKuxYTU2rMaG1W_DMXN3yhgA-OMLkYn4EvsBlP910w</recordid><startdate>20140901</startdate><enddate>20140901</enddate><creator>Vatankhahghadim, Aynaz</creator><creator>Huda, Safeen</creator><creator>Sheikholeslami, Ali</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20140901</creationdate><title>A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions</title><author>Vatankhahghadim, Aynaz ; Huda, Safeen ; Sheikholeslami, Ali</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c402t-607f7f1556b89862be711482529aedef029b77aee3051eda2c42e98f33d33e1a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Circuits</topic><topic>Computer simulation</topic><topic>Design engineering</topic><topic>Dynamic models</topic><topic>Dynamical systems</topic><topic>Equations</topic><topic>Integrated circuit modeling</topic><topic>Magnetic tunnel junction (MTJ)</topic><topic>Magnetic tunneling</topic><topic>Magnetization</topic><topic>Magnetoresistive random access memory</topic><topic>magnetoresistive random-access memory (MRAM)</topic><topic>Mathematical model</topic><topic>Mathematical models</topic><topic>modeling</topic><topic>spin-transfer-torque (STT)</topic><topic>Switches</topic><topic>Tunnel junctions</topic><topic>Vectors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vatankhahghadim, Aynaz</creatorcontrib><creatorcontrib>Huda, Safeen</creatorcontrib><creatorcontrib>Sheikholeslami, Ali</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vatankhahghadim, Aynaz</au><au>Huda, Safeen</au><au>Sheikholeslami, Ali</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions</atitle><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle><stitle>TCSI</stitle><date>2014-09-01</date><risdate>2014</risdate><volume>61</volume><issue>9</issue><spage>2634</spage><epage>2643</epage><pages>2634-2643</pages><issn>1549-8328</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract>Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfer-torque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for their capabilities and limitations. Furthermore, a Verilog-A model is developed to predict dynamic characteristics of the MTJ. These models are used in simulating a prototype circuit to illustrate their strengths and weaknesses.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSI.2014.2332247</doi><tpages>10</tpages><oa>free_for_read</oa></addata></record> |
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ispartof | IEEE transactions on circuits and systems. I, Regular papers, 2014-09, Vol.61 (9), p.2634-2643 |
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subjects | Circuits Computer simulation Design engineering Dynamic models Dynamical systems Equations Integrated circuit modeling Magnetic tunnel junction (MTJ) Magnetic tunneling Magnetization Magnetoresistive random access memory magnetoresistive random-access memory (MRAM) Mathematical model Mathematical models modeling spin-transfer-torque (STT) Switches Tunnel junctions Vectors |
title | A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T22%3A50%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Survey%20on%20Circuit%20Modeling%20of%20Spin-Transfer-Torque%20Magnetic%20Tunnel%20Junctions&rft.jtitle=IEEE%20transactions%20on%20circuits%20and%20systems.%20I,%20Regular%20papers&rft.au=Vatankhahghadim,%20Aynaz&rft.date=2014-09-01&rft.volume=61&rft.issue=9&rft.spage=2634&rft.epage=2643&rft.pages=2634-2643&rft.issn=1549-8328&rft.eissn=1558-0806&rft.coden=ITCSCH&rft_id=info:doi/10.1109/TCSI.2014.2332247&rft_dat=%3Cproquest_RIE%3E1620039075%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1557951186&rft_id=info:pmid/&rft_ieee_id=6848862&rfr_iscdi=true |