A sub 1-V SOI CMOS low noise amplifier for L-band applications

This paper describes a sub 1.0 V low noise amplifier in a 0.35 /spl mu/m SOI (silicon on insulator) CMOS process. Active-body control enables a sub 1.0 V operation, and improves gain and the 1 dB-compression point. The gain of 7.0 dB, the NF of 3.6 dB and the input 1 dB-compression point of -4.5 dBm...

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Bibliographische Detailangaben

Hauptverfasser:	Komurasaki, H., Sato, H., Sasaki, N., Ueda, K., Maeda, S., Yamaguchi, Y., Miki, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Batteries CMOS process CMOS technology Electrodes L-band Low-noise amplifiers MOSFET circuits Parasitic capacitance Silicon on insulator technology Threshold voltage
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