A sub 1-V SOI CMOS low noise amplifier for L-band applications
This paper describes a sub 1.0 V low noise amplifier in a 0.35 /spl mu/m SOI (silicon on insulator) CMOS process. Active-body control enables a sub 1.0 V operation, and improves gain and the 1 dB-compression point. The gain of 7.0 dB, the NF of 3.6 dB and the input 1 dB-compression point of -4.5 dBm...
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| creator | Komurasaki, H. Sato, H. Sasaki, N. Ueda, K. Maeda, S. Yamaguchi, Y. Miki, T. |
| description | This paper describes a sub 1.0 V low noise amplifier in a 0.35 /spl mu/m SOI (silicon on insulator) CMOS process. Active-body control enables a sub 1.0 V operation, and improves gain and the 1 dB-compression point. The gain of 7.0 dB, the NF of 3.6 dB and the input 1 dB-compression point of -4.5 dBm are obtained at 1.0 V and 1.9 GHz. |
| doi_str_mv | 10.1109/RFIC.1998.682069 |
| format | Conference Proceeding |
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The gain of 7.0 dB, the NF of 3.6 dB and the input 1 dB-compression point of -4.5 dBm are obtained at 1.0 V and 1.9 GHz.</description><subject>Batteries</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Electrodes</subject><subject>L-band</subject><subject>Low-noise amplifiers</subject><subject>MOSFET circuits</subject><subject>Parasitic capacitance</subject><subject>Silicon on insulator technology</subject><subject>Threshold voltage</subject><issn>1097-2633</issn><issn>2375-1002</issn><isbn>0780344391</isbn><isbn>9780780344396</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj11LwzAYhYMfYJ27F6_yB1Lzvkna5EYYxWmhUnDq7UjbBCJdW5qJ-O9XmOfmwMPhgUPIPfAUgJvH921ZpGCMTjONPDMXJEGRKwac4yW55bnmQkph4Iokyz5nmAlxQ9YxfvMlUimOMiFPGxp_Ggrsi-7qkhZv9Y724y8dxhAdtYepDz64mfpxphVr7NBROy2wtccwDvGOXHvbR7f-7xX53D5_FK-sql_KYlOxAFwemRYdOuFsoyWizyAzBnMLhivp88Ya59GD4DrLdasaQAOyc41pO5QKQQmxIg9nb3DO7ac5HOz8tz8_FyfoZkc0</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Komurasaki, H.</creator><creator>Sato, H.</creator><creator>Sasaki, N.</creator><creator>Ueda, K.</creator><creator>Maeda, S.</creator><creator>Yamaguchi, Y.</creator><creator>Miki, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1998</creationdate><title>A sub 1-V SOI CMOS low noise amplifier for L-band applications</title><author>Komurasaki, H. ; Sato, H. ; Sasaki, N. ; Ueda, K. ; Maeda, S. ; Yamaguchi, Y. ; Miki, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-83d2e3eab8422f6169927a19054f7ba9ef2f1308678c5b12914deb9cd24521533</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Batteries</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Electrodes</topic><topic>L-band</topic><topic>Low-noise amplifiers</topic><topic>MOSFET circuits</topic><topic>Parasitic capacitance</topic><topic>Silicon on insulator technology</topic><topic>Threshold voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Komurasaki, H.</creatorcontrib><creatorcontrib>Sato, H.</creatorcontrib><creatorcontrib>Sasaki, N.</creatorcontrib><creatorcontrib>Ueda, K.</creatorcontrib><creatorcontrib>Maeda, S.</creatorcontrib><creatorcontrib>Yamaguchi, Y.</creatorcontrib><creatorcontrib>Miki, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Komurasaki, H.</au><au>Sato, H.</au><au>Sasaki, N.</au><au>Ueda, K.</au><au>Maeda, S.</au><au>Yamaguchi, Y.</au><au>Miki, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A sub 1-V SOI CMOS low noise amplifier for L-band applications</atitle><btitle>1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. 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| identifier | ISSN: 1097-2633 |
| ispartof | 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182), 1998, p.153-156 |
| issn | 1097-2633 2375-1002 |
| language | eng |
| recordid | cdi_ieee_primary_682069 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Batteries CMOS process CMOS technology Electrodes L-band Low-noise amplifiers MOSFET circuits Parasitic capacitance Silicon on insulator technology Threshold voltage |
| title | A sub 1-V SOI CMOS low noise amplifier for L-band applications |
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