Study of different spatial charge trapping distribution effect on off-state degradation at elevated temperature in power LDMOS

Different spatial charge trapping distribution effect on off-state degradation in power LDMOS was studied. Electron trapping phenomena is thermally grown in silicon dioxide (SiO 2 ). Due to charge can be trapped in the oxide, it can make structural defects, oxidation-induced defects, impurities, or...

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Bibliographische Detailangaben

Hauptverfasser:	Kurniawan, Erry Dwi, Vivek, N., Gene Sheu, Pramudyo, Antonius Fran Yannu, Hema, E. P., Shao-Ming Yang, Chen, P. A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Asia Charge carrier processes Degradation Educational institutions Electric breakdown elevated temperature off-state degradation power LDMOS Silicon spatial charge trap distribution Temperature distribution
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