On the nature of "permanent" degradation in NBTI

On the nature of "permanent" degradation in NBTI

This paper reports new high temperature measurements of Negative Bias Temperature Instability induced interface states in both NMOS and PMOS devices. Evidence of annealing of the interface states, previously thought to be "permanent", is presented for measurements including a methodology w...

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Hauptverfasser: Nguyen, D. D., Kouhestani, C., Kambour, K. E., Devine, R. A. B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
MOS devices
NBTI defects
reliability
Stress
Stress measurement
Temperature measurement
Threshold voltage
Time measurement
Voltage measurement
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Beschreibung
Zusammenfassung:This paper reports new high temperature measurements of Negative Bias Temperature Instability induced interface states in both NMOS and PMOS devices. Evidence of annealing of the interface states, previously thought to be "permanent", is presented for measurements including a methodology which allows the direct measurement of the time dependent growth/recovery of the interface state component.
ISSN:1930-8841
2374-8036
DOI:10.1109/IIRW.2013.6804181