Optically induced waveguiding in semiconductor optical amplifiers

Summary form only given.Soliton waveguiding effects have been investigated in an active double heterostructure diode structure employed as a nonlinear medium. It was observed that the nonlinearities due to reverse band filling in active semiconductor amplifiers give rise to a spectral region where s...

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Hauptverfasser: Kutsche, C., LiKamWa, P., Loehr, J.P., Kaspi, R.
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LiKamWa, P.
Loehr, J.P.
Kaspi, R.
description Summary form only given.Soliton waveguiding effects have been investigated in an active double heterostructure diode structure employed as a nonlinear medium. It was observed that the nonlinearities due to reverse band filling in active semiconductor amplifiers give rise to a spectral region where self-focusing takes place for photon energies very slightly below the energy corresponding to the peak of the gain. The sample consisted of a standard double heterojunction GaAs-AlGaAs laser diode structure.
doi_str_mv 10.1109/IQEC.1998.680060
format Conference Proceeding
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ispartof Technical Digest. Summaries of Papers Presented at the International Quantum Electronics Conference. Conference Edition. 1998 Technical Digest Series, Vol.7 (IEEE Cat. No.98CH36236), 1998, p.19-20
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Etching
Nonlinear optics
Optical arrays
Optical pumping
Optical refraction
Optical solitons
Optical waveguides
Optimized production technology
Semiconductor optical amplifiers
Stimulated emission
title Optically induced waveguiding in semiconductor optical amplifiers
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