Silicon-on-silicon integration of a GSM transceiver with VCO resonator

Accurate and spurious-free design of an integrated VCO resonator in a GSM transceiver is demonstrated. The high-Q inductor (Q=60 at 1 GHz) in the resonator is on a high-resistivity silicon substrate and the GSM chip is flip-chip mounted on the same substrate. The VCO meets all GSM requirements: phas...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Davis, P., Smith, P., Campbell, E., Lin, J., Gross, K., Bath, G., Low, Y., Lau, M., Degani, Y., Gregus, J., Frye, R., Tai, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	GSM Inductors Low-noise amplifiers Phase noise Radio frequency Radiofrequency amplifiers Silicon Synthesizers Transceivers Voltage-controlled oscillators
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