Silicon-on-silicon integration of a GSM transceiver with VCO resonator
Accurate and spurious-free design of an integrated VCO resonator in a GSM transceiver is demonstrated. The high-Q inductor (Q=60 at 1 GHz) in the resonator is on a high-resistivity silicon substrate and the GSM chip is flip-chip mounted on the same substrate. The VCO meets all GSM requirements: phas...
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| creator | Davis, P. Smith, P. Campbell, E. Lin, J. Gross, K. Bath, G. Low, Y. Lau, M. Degani, Y. Gregus, J. Frye, R. Tai, K. |
| description | Accurate and spurious-free design of an integrated VCO resonator in a GSM transceiver is demonstrated. The high-Q inductor (Q=60 at 1 GHz) in the resonator is on a high-resistivity silicon substrate and the GSM chip is flip-chip mounted on the same substrate. The VCO meets all GSM requirements: phase noise is-142 dBc/Hz at 10 MHz from the 1018 MHz center frequency. A single bipolar chip contains the RF transmit, receive, and synthesizer subsections for the GSM standard. The addition of an external low-noise amplifier, power amplifier, and filters complete the GSM radio section. A number of inductors and capacitors are integrated onto the chip. Many of the passive components needed to operate the transceiver, however, are poor candidates for on-chip integration either because their values are too large or because they have stringent quality factor (Q) requirements. |
| doi_str_mv | 10.1109/ISSCC.1998.672455 |
| format | Conference Proceeding |
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The high-Q inductor (Q=60 at 1 GHz) in the resonator is on a high-resistivity silicon substrate and the GSM chip is flip-chip mounted on the same substrate. The VCO meets all GSM requirements: phase noise is-142 dBc/Hz at 10 MHz from the 1018 MHz center frequency. A single bipolar chip contains the RF transmit, receive, and synthesizer subsections for the GSM standard. The addition of an external low-noise amplifier, power amplifier, and filters complete the GSM radio section. A number of inductors and capacitors are integrated onto the chip. 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Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156)</title><addtitle>ISSCC</addtitle><description>Accurate and spurious-free design of an integrated VCO resonator in a GSM transceiver is demonstrated. The high-Q inductor (Q=60 at 1 GHz) in the resonator is on a high-resistivity silicon substrate and the GSM chip is flip-chip mounted on the same substrate. The VCO meets all GSM requirements: phase noise is-142 dBc/Hz at 10 MHz from the 1018 MHz center frequency. A single bipolar chip contains the RF transmit, receive, and synthesizer subsections for the GSM standard. The addition of an external low-noise amplifier, power amplifier, and filters complete the GSM radio section. A number of inductors and capacitors are integrated onto the chip. Many of the passive components needed to operate the transceiver, however, are poor candidates for on-chip integration either because their values are too large or because they have stringent quality factor (Q) requirements.</description><subject>GSM</subject><subject>Inductors</subject><subject>Low-noise amplifiers</subject><subject>Phase noise</subject><subject>Radio frequency</subject><subject>Radiofrequency amplifiers</subject><subject>Silicon</subject><subject>Synthesizers</subject><subject>Transceivers</subject><subject>Voltage-controlled oscillators</subject><issn>0193-6530</issn><issn>2376-8606</issn><isbn>9780780343443</isbn><isbn>0780343441</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkEtLAzEcxIMPsNZ-AD3l5G1rHv-8jrLYWqj0sOp1SbOpRra7NUktfnsXVhiYOfwYhkHolpI5pcQ8rKqqLOfUGD2XioEQZ2jCuJKFlkSeo5lRmgziwAH4BZoQanghBSdX6DqlL0KIMFJP0KIKbXB9VwxKY8Shy_4j2hyG3O-wxcvqBedou-R8-PERn0L-xO_lBkef-s7mPt6gy51tk5_9-xS9LZ5ey-divVmuysd1ESjVuVAKKOzAGScYNG7bWNVoIxjXkjHvwDVKgHZEEieFMaCtlsY2ygPZgqKKT9H92HuI_ffRp1zvw7CqbW3n-2OqmVSSKsoH8G4Eg_e-PsSwt_G3Hq_ifxRKWeI</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Davis, P.</creator><creator>Smith, P.</creator><creator>Campbell, E.</creator><creator>Lin, J.</creator><creator>Gross, K.</creator><creator>Bath, G.</creator><creator>Low, Y.</creator><creator>Lau, M.</creator><creator>Degani, Y.</creator><creator>Gregus, J.</creator><creator>Frye, R.</creator><creator>Tai, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>7SC</scope><scope>7U5</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>1998</creationdate><title>Silicon-on-silicon integration of a GSM transceiver with VCO resonator</title><author>Davis, P. ; Smith, P. ; Campbell, E. ; Lin, J. ; Gross, K. ; Bath, G. ; Low, Y. ; Lau, M. ; Degani, Y. ; Gregus, J. ; Frye, R. ; Tai, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i118t-77414f4c9c524dcbda7d895238622ec4cd7548c060c659948a869ad7e40b47173</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>GSM</topic><topic>Inductors</topic><topic>Low-noise amplifiers</topic><topic>Phase noise</topic><topic>Radio frequency</topic><topic>Radiofrequency amplifiers</topic><topic>Silicon</topic><topic>Synthesizers</topic><topic>Transceivers</topic><topic>Voltage-controlled oscillators</topic><toplevel>online_resources</toplevel><creatorcontrib>Davis, P.</creatorcontrib><creatorcontrib>Smith, P.</creatorcontrib><creatorcontrib>Campbell, E.</creatorcontrib><creatorcontrib>Lin, J.</creatorcontrib><creatorcontrib>Gross, K.</creatorcontrib><creatorcontrib>Bath, G.</creatorcontrib><creatorcontrib>Low, Y.</creatorcontrib><creatorcontrib>Lau, M.</creatorcontrib><creatorcontrib>Degani, Y.</creatorcontrib><creatorcontrib>Gregus, J.</creatorcontrib><creatorcontrib>Frye, R.</creatorcontrib><creatorcontrib>Tai, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Computer and Information Systems Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Davis, P.</au><au>Smith, P.</au><au>Campbell, E.</au><au>Lin, J.</au><au>Gross, K.</au><au>Bath, G.</au><au>Low, Y.</au><au>Lau, M.</au><au>Degani, Y.</au><au>Gregus, J.</au><au>Frye, R.</au><au>Tai, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Silicon-on-silicon integration of a GSM transceiver with VCO resonator</atitle><btitle>1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156)</btitle><stitle>ISSCC</stitle><date>1998</date><risdate>1998</risdate><spage>248</spage><epage>249</epage><pages>248-249</pages><issn>0193-6530</issn><eissn>2376-8606</eissn><isbn>9780780343443</isbn><isbn>0780343441</isbn><abstract>Accurate and spurious-free design of an integrated VCO resonator in a GSM transceiver is demonstrated. The high-Q inductor (Q=60 at 1 GHz) in the resonator is on a high-resistivity silicon substrate and the GSM chip is flip-chip mounted on the same substrate. The VCO meets all GSM requirements: phase noise is-142 dBc/Hz at 10 MHz from the 1018 MHz center frequency. A single bipolar chip contains the RF transmit, receive, and synthesizer subsections for the GSM standard. The addition of an external low-noise amplifier, power amplifier, and filters complete the GSM radio section. A number of inductors and capacitors are integrated onto the chip. Many of the passive components needed to operate the transceiver, however, are poor candidates for on-chip integration either because their values are too large or because they have stringent quality factor (Q) requirements.</abstract><pub>IEEE</pub><doi>10.1109/ISSCC.1998.672455</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0193-6530 |
| ispartof | 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156), 1998, p.248-249 |
| issn | 0193-6530 2376-8606 |
| language | eng |
| recordid | cdi_ieee_primary_672455 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | GSM Inductors Low-noise amplifiers Phase noise Radio frequency Radiofrequency amplifiers Silicon Synthesizers Transceivers Voltage-controlled oscillators |
| title | Silicon-on-silicon integration of a GSM transceiver with VCO resonator |
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