A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture
In this paper, a g m -boosted low-noise amplifier (LNA) with a low-voltage architecture is proposed to enhance gain and noise performance under low-power operation. It is designed at 5-GHz using 0.18-μm CMOS process. By employing current-reused, and forward-body-bias techniques, LNA can operate at a...
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| creator | Chia-Lin Hsieh Ming-Hang Wu Jen-Hao Cheng Jeng-Han Tsai Tian-Wei Huang |
| description | In this paper, a g m -boosted low-noise amplifier (LNA) with a low-voltage architecture is proposed to enhance gain and noise performance under low-power operation. It is designed at 5-GHz using 0.18-μm CMOS process. By employing current-reused, and forward-body-bias techniques, LNA can operate at a reduced supply voltage with micro-watt dc power consumption. In addition, g m -boosted topology using transformer-coupling is added to the LNA to further improve gain and to reduce noise factor simultaneously. Based on aforementioned techniques, the 5-GHz LNA presents a gain of 10.0 dB and a noise figure of 4.8 dB at 4.8 GHz. Under a supply voltage of 0.6 V, the dc power consumption is 336 μW. |
| doi_str_mv | 10.1109/MWSYM.2013.6697468 |
| format | Conference Proceeding |
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It is designed at 5-GHz using 0.18-μm CMOS process. By employing current-reused, and forward-body-bias techniques, LNA can operate at a reduced supply voltage with micro-watt dc power consumption. In addition, g m -boosted topology using transformer-coupling is added to the LNA to further improve gain and to reduce noise factor simultaneously. Based on aforementioned techniques, the 5-GHz LNA presents a gain of 10.0 dB and a noise figure of 4.8 dB at 4.8 GHz. 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Under a supply voltage of 0.6 V, the dc power consumption is 336 μW.</description><subject>CMOS integrated circuits</subject><subject>current-reused</subject><subject>forward-body-bias</subject><subject>Gain</subject><subject>low-noise amplifiers (LNAs)</subject><subject>Microwave amplifiers</subject><subject>Microwave circuits</subject><subject>Noise</subject><subject>Power demand</subject><subject>transformer-couple</subject><subject>ultra-low-power</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>9781467361767</isbn><isbn>1467361763</isbn><isbn>9781467361774</isbn><isbn>1467361771</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkM1OwkAURkejiQ3yArqZF5g6v_d2lg1RMAFZSERXZGhvoQYG0xaJPpvP4DOpkdW3OTnJ-Ri7UjJVSvqbyfzxZZJqqUwK4NFCdsL6HjNlAQ0oBDxliXYIArWCM5ZIZb0A654vWL9tX6WUf5ACnbBpzmUK4okbA-L7a86dGI4--fgh5_u2jise-GZ3EO-7TRdWxEMs-SrUUVBch1jQlmLHQ1Os646Kbt_QJTuvwqal_nF7bHZ3OxuMxHg6vB_kY1ErdJ2wOmAFVVmWS6yM8UpbXDqv9dIXVhmJ3heVd6FyDjSVRv5GYmYpWF16AtNj1__amogWb029Dc3H4viG-QFPAU8e</recordid><startdate>201306</startdate><enddate>201306</enddate><creator>Chia-Lin Hsieh</creator><creator>Ming-Hang Wu</creator><creator>Jen-Hao Cheng</creator><creator>Jeng-Han Tsai</creator><creator>Tian-Wei Huang</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201306</creationdate><title>A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture</title><author>Chia-Lin Hsieh ; Ming-Hang Wu ; Jen-Hao Cheng ; Jeng-Han Tsai ; Tian-Wei Huang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-42a7f6fdddb7f3391247b5922b9c4130799cf95af5562ed30468784ea42d9e63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>CMOS integrated circuits</topic><topic>current-reused</topic><topic>forward-body-bias</topic><topic>Gain</topic><topic>low-noise amplifiers (LNAs)</topic><topic>Microwave amplifiers</topic><topic>Microwave circuits</topic><topic>Noise</topic><topic>Power demand</topic><topic>transformer-couple</topic><topic>ultra-low-power</topic><toplevel>online_resources</toplevel><creatorcontrib>Chia-Lin Hsieh</creatorcontrib><creatorcontrib>Ming-Hang Wu</creatorcontrib><creatorcontrib>Jen-Hao Cheng</creatorcontrib><creatorcontrib>Jeng-Han Tsai</creatorcontrib><creatorcontrib>Tian-Wei Huang</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chia-Lin Hsieh</au><au>Ming-Hang Wu</au><au>Jen-Hao Cheng</au><au>Jeng-Han Tsai</au><au>Tian-Wei Huang</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture</atitle><btitle>2013 IEEE MTT-S International Microwave Symposium Digest (MTT)</btitle><stitle>MWSYM</stitle><date>2013-06</date><risdate>2013</risdate><spage>1</spage><epage>3</epage><pages>1-3</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><eisbn>9781467361767</eisbn><eisbn>1467361763</eisbn><eisbn>9781467361774</eisbn><eisbn>1467361771</eisbn><abstract>In this paper, a g m -boosted low-noise amplifier (LNA) with a low-voltage architecture is proposed to enhance gain and noise performance under low-power operation. It is designed at 5-GHz using 0.18-μm CMOS process. By employing current-reused, and forward-body-bias techniques, LNA can operate at a reduced supply voltage with micro-watt dc power consumption. In addition, g m -boosted topology using transformer-coupling is added to the LNA to further improve gain and to reduce noise factor simultaneously. Based on aforementioned techniques, the 5-GHz LNA presents a gain of 10.0 dB and a noise figure of 4.8 dB at 4.8 GHz. Under a supply voltage of 0.6 V, the dc power consumption is 336 μW.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2013.6697468</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0149-645X |
| ispartof | 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013, p.1-3 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_6697468 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS integrated circuits current-reused forward-body-bias Gain low-noise amplifiers (LNAs) Microwave amplifiers Microwave circuits Noise Power demand transformer-couple ultra-low-power |
| title | A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture |
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