GaAs MMIC pHEMT gate metal thermometry

A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias. Measureme...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Schwitter, Bryan K., Parker, Anthony E., Albahrani, Sayed A., Fattorini, Anthony P., Heimlich, Michael C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electrical resistance measurement Electrothermal effects Gallium arsenide gate leakage Heating HEMTs Logic gates MMICs Temperature measurement Thermal resistance
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