A package-integrated 50W high-efficiency RF CMOS-GaN class-E power amplifier

A 50 W CMOS-GaN class-E power amplifier in a package is presented. The class-E operated GaN HEMT power bar switches are driven by a high speed, high voltage CMOS power bar driver chip, implemented in a standard 65 nm process technology. The proposed switch-mode power amplifier demonstrates 76% line-...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	van der Heijden, Mark P., Acar, Mustafa, Maroldt, Stephan
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Base station class-E CMOS CMOS integrated circuits digital transmitter drain efficiency Gallium nitride GaN HEMTs Power amplifiers Power generation Radio frequency switch mode power amplifier
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