Design of enhancement mode single-gate and doublegate multi-channel GaN HEMT with vertical polarity inversion heterostructure

We propose the design and simulation study of novel gallium nitride (GaN) devices, consisting of nitride stacks with different polarity, to provide multiple channels by flexible gate(s) control. Calibrated TCAD device simulations visualize device characteristics of 0.62-μm-gate-length multi-channel...

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Hauptverfasser:	Peijie Feng, Koon Hoo Teo, Oishi, Toshiyuki, Yamanaka, Koji, Rui Ma
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium nitride HEMTs III-V semiconductor materials Logic gates MODFETs
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creator	Peijie Feng Koon Hoo Teo Oishi, Toshiyuki Yamanaka, Koji Rui Ma
description	We propose the design and simulation study of novel gallium nitride (GaN) devices, consisting of nitride stacks with different polarity, to provide multiple channels by flexible gate(s) control. Calibrated TCAD device simulations visualize device characteristics of 0.62-μm-gate-length multi-channel transistors. E-mode operations demonstrate a positive small threshold voltage V th below 2 V at V ds = 0.1 V for all multichannel devices, and a high on-state current I on (V gs = V ds = 4 V) up to 4 A/mm achieved by 4 channels induced within the device.
doi_str_mv	10.1109/ISPSD.2013.6694481
format	Conference Proceeding
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subjects	Gallium nitride HEMTs III-V semiconductor materials Logic gates MODFETs
title	Design of enhancement mode single-gate and doublegate multi-channel GaN HEMT with vertical polarity inversion heterostructure
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