A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process
A two-mask process for 4H-SiC Trench MOS Barrier Schottky (TMBS) rectifiers was studied in this paper. Systematic simulations and process developments were performed and SiC TMBS devices with breakdown voltage (BV) larger than 600V were successfully fabricated. SiC TMBS devices with a mesa width of...
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| creator | Chwan-Ying Lee Cheng-Tyng Yen Kuan-Wei Chu Young-Shying Chen Chien-Chung Hung Lurng-Shehng Lee Tzu-Ming Yang Chiao-Shun Chuang Cheng-Chin Huang Ming-Jinn Tsai |
| description | A two-mask process for 4H-SiC Trench MOS Barrier Schottky (TMBS) rectifiers was studied in this paper. Systematic simulations and process developments were performed and SiC TMBS devices with breakdown voltage (BV) larger than 600V were successfully fabricated. SiC TMBS devices with a mesa width of 2μm to 4μm, a trench depth 2μm and a trench oxide layer of 0.2μm oxide thickness provide good characteristics of low reverse leakage current and low forward voltage drop. This simple two-mask process (one is for defining trench and the other is for defining top electrode) gives the SiC TMBS device the advantages of getting ride of expensive processes such as high temperature Al + implantations (>450°C) and ultra-high temperature activations (>1600°C). This may enable SiC TMBS a potential lost cost solution to help further widespread the adoption of SiC Schottky rectifiers. |
| doi_str_mv | 10.1109/ISPSD.2013.6694473 |
| format | Conference Proceeding |
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Systematic simulations and process developments were performed and SiC TMBS devices with breakdown voltage (BV) larger than 600V were successfully fabricated. SiC TMBS devices with a mesa width of 2μm to 4μm, a trench depth 2μm and a trench oxide layer of 0.2μm oxide thickness provide good characteristics of low reverse leakage current and low forward voltage drop. This simple two-mask process (one is for defining trench and the other is for defining top electrode) gives the SiC TMBS device the advantages of getting ride of expensive processes such as high temperature Al + implantations (>450°C) and ultra-high temperature activations (>1600°C). 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Systematic simulations and process developments were performed and SiC TMBS devices with breakdown voltage (BV) larger than 600V were successfully fabricated. SiC TMBS devices with a mesa width of 2μm to 4μm, a trench depth 2μm and a trench oxide layer of 0.2μm oxide thickness provide good characteristics of low reverse leakage current and low forward voltage drop. This simple two-mask process (one is for defining trench and the other is for defining top electrode) gives the SiC TMBS device the advantages of getting ride of expensive processes such as high temperature Al + implantations (>450°C) and ultra-high temperature activations (>1600°C). This may enable SiC TMBS a potential lost cost solution to help further widespread the adoption of SiC Schottky rectifiers.</description><subject>Breakdown voltage</subject><subject>Electric fields</subject><subject>Etching</subject><subject>Leakage currents</subject><subject>Rectifiers</subject><subject>Schottky barriers</subject><subject>Silicon carbide</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9781467351348</isbn><isbn>1467351342</isbn><isbn>9781467351355</isbn><isbn>9781467351362</isbn><isbn>1467351350</isbn><isbn>1467351369</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkMlqwzAYhNUNGtK8QHvRCyiVrP2YpksCKSk4OQdJ_kXULA6yafHb16W59DQw3zAMg9A9o2PGqH2clx_l87igjI-VskJofoFGVhsmlOaScSkv0YBZoQjtQ1f_mDDXPaOKE2WkuEWjpvmklDKtlDBygNYTfKy_YI_FjJRpilcZjmGL35clfnI5J8i4DNu6bXcdzhDaFH-t6HxOwbVQYd9hh9vvmhxcs8OnXAdomjt0E92-gdFZh2j9-rKazshi-TafThYkMS1b0i_QYGIAGivOReGLKL03LHAfvKE0eg26ikzRIqjIuBW04l4WYKwFpwo-RA9_vQkANqecDi53m_NJ_Af2P1W6</recordid><startdate>201305</startdate><enddate>201305</enddate><creator>Chwan-Ying Lee</creator><creator>Cheng-Tyng Yen</creator><creator>Kuan-Wei Chu</creator><creator>Young-Shying Chen</creator><creator>Chien-Chung Hung</creator><creator>Lurng-Shehng Lee</creator><creator>Tzu-Ming Yang</creator><creator>Chiao-Shun Chuang</creator><creator>Cheng-Chin Huang</creator><creator>Ming-Jinn Tsai</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201305</creationdate><title>A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process</title><author>Chwan-Ying Lee ; Cheng-Tyng Yen ; Kuan-Wei Chu ; Young-Shying Chen ; Chien-Chung Hung ; Lurng-Shehng Lee ; Tzu-Ming Yang ; Chiao-Shun Chuang ; Cheng-Chin Huang ; Ming-Jinn Tsai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-4857e8fce0fd3342b2f5bb81c3bcb800fb7e7df1602c6f13940d3b52e899ea623</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Breakdown voltage</topic><topic>Electric fields</topic><topic>Etching</topic><topic>Leakage currents</topic><topic>Rectifiers</topic><topic>Schottky barriers</topic><topic>Silicon carbide</topic><toplevel>online_resources</toplevel><creatorcontrib>Chwan-Ying Lee</creatorcontrib><creatorcontrib>Cheng-Tyng Yen</creatorcontrib><creatorcontrib>Kuan-Wei Chu</creatorcontrib><creatorcontrib>Young-Shying Chen</creatorcontrib><creatorcontrib>Chien-Chung Hung</creatorcontrib><creatorcontrib>Lurng-Shehng Lee</creatorcontrib><creatorcontrib>Tzu-Ming Yang</creatorcontrib><creatorcontrib>Chiao-Shun Chuang</creatorcontrib><creatorcontrib>Cheng-Chin Huang</creatorcontrib><creatorcontrib>Ming-Jinn Tsai</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chwan-Ying Lee</au><au>Cheng-Tyng Yen</au><au>Kuan-Wei Chu</au><au>Young-Shying Chen</au><au>Chien-Chung Hung</au><au>Lurng-Shehng Lee</au><au>Tzu-Ming Yang</au><au>Chiao-Shun Chuang</au><au>Cheng-Chin Huang</au><au>Ming-Jinn Tsai</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process</atitle><btitle>2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)</btitle><stitle>ISPSD</stitle><date>2013-05</date><risdate>2013</risdate><spage>171</spage><epage>174</epage><pages>171-174</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9781467351348</isbn><isbn>1467351342</isbn><eisbn>9781467351355</eisbn><eisbn>9781467351362</eisbn><eisbn>1467351350</eisbn><eisbn>1467351369</eisbn><abstract>A two-mask process for 4H-SiC Trench MOS Barrier Schottky (TMBS) rectifiers was studied in this paper. Systematic simulations and process developments were performed and SiC TMBS devices with breakdown voltage (BV) larger than 600V were successfully fabricated. SiC TMBS devices with a mesa width of 2μm to 4μm, a trench depth 2μm and a trench oxide layer of 0.2μm oxide thickness provide good characteristics of low reverse leakage current and low forward voltage drop. This simple two-mask process (one is for defining trench and the other is for defining top electrode) gives the SiC TMBS device the advantages of getting ride of expensive processes such as high temperature Al + implantations (>450°C) and ultra-high temperature activations (>1600°C). This may enable SiC TMBS a potential lost cost solution to help further widespread the adoption of SiC Schottky rectifiers.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2013.6694473</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1063-6854 |
| ispartof | 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.171-174 |
| issn | 1063-6854 1946-0201 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Breakdown voltage Electric fields Etching Leakage currents Rectifiers Schottky barriers Silicon carbide |
| title | A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process |
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