Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise
Novel 3.3-kV trench IGBT with low loss and low dv AK /dt noise was developed. The structural feature of the IGBTs is deep p-WELL layers separated from trench gates. This structure suppresses excess V GE overshoot and then reduces recovery dv AK /dt. Moreover, this effect is enhanced by reducing the...
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| creator | Toyota, Yoshiaki Watanabe, So Arai, Taiga Wakagi, Masatoshi Mori, Mutsuhiro Shinagawa, Masashi Azuma, Katsunori Shima, Yuji Oda, Tetsuo Toyoda, Yasushi Saito, Katsuaki |
| description | Novel 3.3-kV trench IGBT with low loss and low dv AK /dt noise was developed. The structural feature of the IGBTs is deep p-WELL layers separated from trench gates. This structure suppresses excess V GE overshoot and then reduces recovery dv AK /dt. Moreover, this effect is enhanced by reducing the resistance of the deep p-WELL layers (R FP ). It was found that, for the first time, the trade-off characteristics between V CEsat and recovery dv AK /dt were drastically improved by separating p-WELL layers from trench gates and decreasing R FP . The recovery dv AK /dt could be reduced by 79% more than that for the conventional trench IGBT, maintaining a small V CEsat and E on equal to the conventional one. |
| doi_str_mv | 10.1109/ISPSD.2013.6694391 |
| format | Conference Proceeding |
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The recovery dv AK /dt could be reduced by 79% more than that for the conventional trench IGBT, maintaining a small V CEsat and E on equal to the conventional one.</description><subject>Charge carrier processes</subject><subject>Electrodes</subject><subject>Electromagnetic interference</subject><subject>Insulated gate bipolar transistors</subject><subject>Logic gates</subject><subject>Noise</subject><subject>Resistance</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9781467351348</isbn><isbn>1467351342</isbn><isbn>9781467351355</isbn><isbn>9781467351362</isbn><isbn>1467351350</isbn><isbn>1467351369</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUNtKw0AUXG9gqfkBfdkf2HRPzl6yjxLtBYoKrb6WTfaERmMiSWjx7w3aFx-GYZhhGIaxW5AxgHSz1eZl8xAnEjA2xil0cMYiZ1NQxqIG1PqcTcApI-QYuvjnqfRy9KRBYVKtrlnU9-9SSrDGqFRPWPbUHqjmGKP4eOM-HHxTUOBDR02x58tqseXHatjzuj2O6Hvum_ArwmEWBt60VU837Kr0dU_Riafsdf64zZZi_bxYZfdrUSSJGkTinKEc0CHJUChEjSVIAg8EOeqcrKdSoc1TPY4jn2gFpCxCYgtMscQpu_vrrYho99VVn7773p0uwR_PK02w</recordid><startdate>201305</startdate><enddate>201305</enddate><creator>Toyota, Yoshiaki</creator><creator>Watanabe, So</creator><creator>Arai, Taiga</creator><creator>Wakagi, Masatoshi</creator><creator>Mori, Mutsuhiro</creator><creator>Shinagawa, Masashi</creator><creator>Azuma, Katsunori</creator><creator>Shima, Yuji</creator><creator>Oda, Tetsuo</creator><creator>Toyoda, Yasushi</creator><creator>Saito, Katsuaki</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201305</creationdate><title>Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise</title><author>Toyota, Yoshiaki ; Watanabe, So ; Arai, Taiga ; Wakagi, Masatoshi ; Mori, Mutsuhiro ; Shinagawa, Masashi ; Azuma, Katsunori ; Shima, Yuji ; Oda, Tetsuo ; Toyoda, Yasushi ; Saito, Katsuaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c224t-2996eb1393e0dc43353f10e1a1e1b35be7aef437b85664ea2541e473127c383f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Charge carrier processes</topic><topic>Electrodes</topic><topic>Electromagnetic interference</topic><topic>Insulated gate bipolar transistors</topic><topic>Logic gates</topic><topic>Noise</topic><topic>Resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>Toyota, Yoshiaki</creatorcontrib><creatorcontrib>Watanabe, So</creatorcontrib><creatorcontrib>Arai, Taiga</creatorcontrib><creatorcontrib>Wakagi, Masatoshi</creatorcontrib><creatorcontrib>Mori, Mutsuhiro</creatorcontrib><creatorcontrib>Shinagawa, Masashi</creatorcontrib><creatorcontrib>Azuma, Katsunori</creatorcontrib><creatorcontrib>Shima, Yuji</creatorcontrib><creatorcontrib>Oda, Tetsuo</creatorcontrib><creatorcontrib>Toyoda, Yasushi</creatorcontrib><creatorcontrib>Saito, Katsuaki</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Toyota, Yoshiaki</au><au>Watanabe, So</au><au>Arai, Taiga</au><au>Wakagi, Masatoshi</au><au>Mori, Mutsuhiro</au><au>Shinagawa, Masashi</au><au>Azuma, Katsunori</au><au>Shima, Yuji</au><au>Oda, Tetsuo</au><au>Toyoda, Yasushi</au><au>Saito, Katsuaki</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise</atitle><btitle>2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)</btitle><stitle>ISPSD</stitle><date>2013-05</date><risdate>2013</risdate><spage>29</spage><epage>32</epage><pages>29-32</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9781467351348</isbn><isbn>1467351342</isbn><eisbn>9781467351355</eisbn><eisbn>9781467351362</eisbn><eisbn>1467351350</eisbn><eisbn>1467351369</eisbn><abstract>Novel 3.3-kV trench IGBT with low loss and low dv AK /dt noise was developed. The structural feature of the IGBTs is deep p-WELL layers separated from trench gates. This structure suppresses excess V GE overshoot and then reduces recovery dv AK /dt. Moreover, this effect is enhanced by reducing the resistance of the deep p-WELL layers (R FP ). It was found that, for the first time, the trade-off characteristics between V CEsat and recovery dv AK /dt were drastically improved by separating p-WELL layers from trench gates and decreasing R FP . The recovery dv AK /dt could be reduced by 79% more than that for the conventional trench IGBT, maintaining a small V CEsat and E on equal to the conventional one.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2013.6694391</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1063-6854 |
| ispartof | 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.29-32 |
| issn | 1063-6854 1946-0201 |
| language | eng |
| recordid | cdi_ieee_primary_6694391 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Charge carrier processes Electrodes Electromagnetic interference Insulated gate bipolar transistors Logic gates Noise Resistance |
| title | Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise |
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