TiOx memristors with variable turn-on voltage using field-effect for non-volatile memory

This work demonstrates the first use of field-effect based memristors that exhibit variable turn-on voltage. Turn-on voltage as low as 4V is achieved in this work and the switching characteristics is reproducible. The novelty of this work compared to earlier work based on metal-insulator-metal (MIM)...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Pai, Pradeep, Chowdhury, Faisal K., Tien-Vinh Dang-Tran, Tabib-Azar, Massood
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electrodes Logic gates Memristors Nonvolatile memory Optical switches Resistance
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