A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers

A compact H-band (220-325 GHz) low-noise amplifier circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 nm metamorphic high electron mobility transistors (mHEMTs). The realized four-stage cascode LNA achieved a small-signal gain of 31 dB at 243 GHz and mo...

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Bibliographische Detailangaben

Hauptverfasser:	Tessmann, A., Hurm, V., Leuther, A., Massler, H., Weber, R., Kuri, M., Riessle, M., Stulz, H. P., Zink, M., Schlechtweg, M., Ambacher, O., Narhi, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gain Gallium arsenide grounded coplanar waveguide (GCPW) H-band low-noise amplifier (LNA) Low-noise amplifiers metamorphic high electron mobility transistor (mHEMT) mHEMTs millimeter-wave monolithic integrated circuit (MMIC) MMICs Scattering parameters Waveguide transitions waveguide-to-microstrip transition
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