Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

As an important step in understanding trap-related mechanisms in AlGaN/GaN transistors, the physical properties of surface states have been analyzed through the study of the transfer characteristics of a MISFET. This letter focused initially on the relationship between donor parameters (concentratio...

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Veröffentlicht in:	IEEE electron device letters 2014-01, Vol.35 (1), p.27-29
Hauptverfasser:	Longobardi, Giorgia, Udrea, Florin, Sque, Stephen, Hurkx, Godefridus A. M., Croon, Jeroen, Napoli, Ettore, Sonsky, Jan
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Applied sciences Compound structure devices Electron traps Electronics Energy states Exact sciences and technology Gallium nitride Gallium nitride (GaN) HEMTs metal-insulator-semiconductor field-effect transistor (MISFET) MISFETs MODFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices surface traps Transistors two-dimensional electron gas (2DEG)
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