Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser

In this paper, we present a comprehensive study of carrier statistics in germanium with high uniaxial strain along the [100] direction. Several types of PL experiments were conducted to investigate polarization-, temperature- and excitation-dependent carrier statistics in germanium under various amo...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2014-07, Vol.20 (4), p.16-22
Hauptverfasser:	Donguk Nam, Sukhdeo, David S., Gupta, Shashank, Ju-Hyung Kang, Brongersma, Mark L., Saraswat, Krishna C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carriers Emission Germanium Laser excitation Lasers Lasing optical interconnects Optical polarization photoluminescence Photonic band gap Raman spectroscopy Silicon Statistics Strain Temperature measurement Uniaxial strain Valence band
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