Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser
In this paper, we present a comprehensive study of carrier statistics in germanium with high uniaxial strain along the [100] direction. Several types of PL experiments were conducted to investigate polarization-, temperature- and excitation-dependent carrier statistics in germanium under various amo...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2014-07, Vol.20 (4), p.16-22 |
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| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Donguk Nam Sukhdeo, David S. Gupta, Shashank Ju-Hyung Kang Brongersma, Mark L. Saraswat, Krishna C. |
| description | In this paper, we present a comprehensive study of carrier statistics in germanium with high uniaxial strain along the [100] direction. Several types of PL experiments were conducted to investigate polarization-, temperature- and excitation-dependent carrier statistics in germanium under various amounts of uniaxial strain. With the ability to clearly resolve multiple photoluminescence peaks originating from strain-induced valence band splitting, we experimentally observed strongly polarized light emission from direct band gap transitions. Our experiments also confirm that uniaxial strain increases the hole population in the highest valence band as well as the electron population in the direct conduction band. Based upon our experimental results, we present theoretical modeling showing that the lasing threshold of a germanium laser can be reduced by >100× with 2.5% strain. |
| doi_str_mv | 10.1109/JSTQE.2013.2293764 |
| format | Article |
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Several types of PL experiments were conducted to investigate polarization-, temperature- and excitation-dependent carrier statistics in germanium under various amounts of uniaxial strain. With the ability to clearly resolve multiple photoluminescence peaks originating from strain-induced valence band splitting, we experimentally observed strongly polarized light emission from direct band gap transitions. Our experiments also confirm that uniaxial strain increases the hole population in the highest valence band as well as the electron population in the direct conduction band. Based upon our experimental results, we present theoretical modeling showing that the lasing threshold of a germanium laser can be reduced by >100× with 2.5% strain.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2013.2293764</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Carriers ; Emission ; Germanium ; Laser excitation ; Lasers ; Lasing ; optical interconnects ; Optical polarization ; photoluminescence ; Photonic band gap ; Raman spectroscopy ; Silicon ; Statistics ; Strain ; Temperature measurement ; Uniaxial strain ; Valence band</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2014-07, Vol.20 (4), p.16-22</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jul/Aug 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c394t-2cc9c51eeda781ad7d4754e07c566a60911a39e41cebfdebb8e45430c9c1ab5f3</citedby><cites>FETCH-LOGICAL-c394t-2cc9c51eeda781ad7d4754e07c566a60911a39e41cebfdebb8e45430c9c1ab5f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6678709$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6678709$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Donguk Nam</creatorcontrib><creatorcontrib>Sukhdeo, David S.</creatorcontrib><creatorcontrib>Gupta, Shashank</creatorcontrib><creatorcontrib>Ju-Hyung Kang</creatorcontrib><creatorcontrib>Brongersma, Mark L.</creatorcontrib><creatorcontrib>Saraswat, Krishna C.</creatorcontrib><title>Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>In this paper, we present a comprehensive study of carrier statistics in germanium with high uniaxial strain along the [100] direction. 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Based upon our experimental results, we present theoretical modeling showing that the lasing threshold of a germanium laser can be reduced by >100× with 2.5% strain.</description><subject>Carriers</subject><subject>Emission</subject><subject>Germanium</subject><subject>Laser excitation</subject><subject>Lasers</subject><subject>Lasing</subject><subject>optical interconnects</subject><subject>Optical polarization</subject><subject>photoluminescence</subject><subject>Photonic band gap</subject><subject>Raman spectroscopy</subject><subject>Silicon</subject><subject>Statistics</subject><subject>Strain</subject><subject>Temperature measurement</subject><subject>Uniaxial strain</subject><subject>Valence band</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkM9LwzAUx4soOKf_gF4CXrx05mfTHmXMqRREt4G3kqavLKNrZtKi--9NN_Hg6YWXzzfv5RNF1wRPCMHZ_cti-TabUEzYhNKMyYSfRCMiRBpzwelpOGMpY5rgj_PowvsNxjjlKR5F74uur_bI1miqnDPg0KJTnfGd0R6ZFq1ao76Napp9uHDKtFChOaDaOqRQbr_i5dqBX9vm0M6VB3cZndWq8XD1W8fR6nG2nD7F-ev8efqQx5plvIup1pkWBKBSMiWqkhWXggOWWiSJSnBGiGIZcKKhrCsoyxTCXxgOKaJKUbNxdHd8d-fsZw--K7bGa2ga1YLtfUEExYMKIQN6-w_d2N61YbtAEcYYodlA0SOlnfXeQV3snNkqty8ILgbNxUFzMWgufjWH0M0xZADgL5AkMpVh-g9e_nio</recordid><startdate>201407</startdate><enddate>201407</enddate><creator>Donguk Nam</creator><creator>Sukhdeo, David S.</creator><creator>Gupta, Shashank</creator><creator>Ju-Hyung Kang</creator><creator>Brongersma, Mark L.</creator><creator>Saraswat, Krishna C.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Several types of PL experiments were conducted to investigate polarization-, temperature- and excitation-dependent carrier statistics in germanium under various amounts of uniaxial strain. With the ability to clearly resolve multiple photoluminescence peaks originating from strain-induced valence band splitting, we experimentally observed strongly polarized light emission from direct band gap transitions. Our experiments also confirm that uniaxial strain increases the hole population in the highest valence band as well as the electron population in the direct conduction band. Based upon our experimental results, we present theoretical modeling showing that the lasing threshold of a germanium laser can be reduced by >100× with 2.5% strain.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSTQE.2013.2293764</doi><tpages>7</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Carriers Emission Germanium Laser excitation Lasers Lasing optical interconnects Optical polarization photoluminescence Photonic band gap Raman spectroscopy Silicon Statistics Strain Temperature measurement Uniaxial strain Valence band |
| title | Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser |
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