Modular Multilevel Converter Models for Electromagnetic Transients
Modular multilevel converters (MMCs) may contain numerous insulated-gate bipolar transistors. The modeling of such converters for electromagnetic transient-type (EMT-type) simulations is complex. Detailed models used in MMC-HVDC simulations may require very large computing times. Simplified and aver...
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Veröffentlicht in: | IEEE transactions on power delivery 2014-06, Vol.29 (3), p.1481-1489 |
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creator | Saad, Hani Dennetière, Sébastien Mahseredjian, Jean Delarue, Philippe Guillaud, Xavier Peralta, Jaime Nguefeu, Samuel |
description | Modular multilevel converters (MMCs) may contain numerous insulated-gate bipolar transistors. The modeling of such converters for electromagnetic transient-type (EMT-type) simulations is complex. Detailed models used in MMC-HVDC simulations may require very large computing times. Simplified and averaged models have been proposed in the past to overcome this problem. In this paper, existing averaged and simplified models are improved in order to increase their range of applications. The models are compared and analyzed for different transient events on an MMC-HVDC system. |
doi_str_mv | 10.1109/TPWRD.2013.2285633 |
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The modeling of such converters for electromagnetic transient-type (EMT-type) simulations is complex. Detailed models used in MMC-HVDC simulations may require very large computing times. Simplified and averaged models have been proposed in the past to overcome this problem. In this paper, existing averaged and simplified models are improved in order to increase their range of applications. The models are compared and analyzed for different transient events on an MMC-HVDC system.</description><identifier>ISSN: 0885-8977</identifier><identifier>EISSN: 1937-4208</identifier><identifier>DOI: 10.1109/TPWRD.2013.2285633</identifier><identifier>CODEN: ITPDE5</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Average-value model (AVM) ; Capacitors ; Computational modeling ; Convertors ; Direct current networks ; Electrical engineering. Electrical power engineering ; Electrical machines ; Electrical power engineering ; Electronics ; EMT-type programs ; Exact sciences and technology ; HVDC transmission ; Insulated gate bipolar transistors ; Integrated circuit modeling ; Mathematical model ; modular multilevel converter (MMC) ; Other multijunction devices. Power transistors. Thyristors ; Power electronics, power supplies ; Power networks and lines ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Switches ; switching function ; Voltage control ; voltage-source converter (VSC)</subject><ispartof>IEEE transactions on power delivery, 2014-06, Vol.29 (3), p.1481-1489</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The modeling of such converters for electromagnetic transient-type (EMT-type) simulations is complex. Detailed models used in MMC-HVDC simulations may require very large computing times. Simplified and averaged models have been proposed in the past to overcome this problem. In this paper, existing averaged and simplified models are improved in order to increase their range of applications. The models are compared and analyzed for different transient events on an MMC-HVDC system.</description><subject>Applied sciences</subject><subject>Average-value model (AVM)</subject><subject>Capacitors</subject><subject>Computational modeling</subject><subject>Convertors</subject><subject>Direct current networks</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electrical machines</subject><subject>Electrical power engineering</subject><subject>Electronics</subject><subject>EMT-type programs</subject><subject>Exact sciences and technology</subject><subject>HVDC transmission</subject><subject>Insulated gate bipolar transistors</subject><subject>Integrated circuit modeling</subject><subject>Mathematical model</subject><subject>modular multilevel converter (MMC)</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Power electronics, power supplies</subject><subject>Power networks and lines</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Switches</subject><subject>switching function</subject><subject>Voltage control</subject><subject>voltage-source converter (VSC)</subject><issn>0885-8977</issn><issn>1937-4208</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFb_gF4C4jF19iPZ3aPW-gEtilQ8LpvNRFLSbN1NCv57U1s8Dcw87wzzEHJJYUIp6Nvl2-f7w4QB5RPGVJZzfkRGVHOZCgbqmIxAqSxVWspTchbjCgAEaBiR-4Uv-8aGZNE3Xd3gFptk6tsthg6Hpi-xiUnlQzJr0HXBr-1Xi13tkmWwbayx7eI5OalsE_HiUMfk43G2nD6n89enl-ndPHVcii6luqC65KooGS2osJwhZlCBBbRcgXUWKLKidDk6YEIKWwibW5brjGZMaT4m1_u9m-C_e4ydWfk-tMNJQzORaS0kFwPF9pQLPsaAldmEem3Dj6Fgdq7Mnyuzc2UOrobQzWG1jc421fCbq-N_kqkcuMzkwF3tuRoR_8d5LnPFGf8FHadydQ</recordid><startdate>20140601</startdate><enddate>20140601</enddate><creator>Saad, Hani</creator><creator>Dennetière, Sébastien</creator><creator>Mahseredjian, Jean</creator><creator>Delarue, Philippe</creator><creator>Guillaud, Xavier</creator><creator>Peralta, Jaime</creator><creator>Nguefeu, Samuel</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Electrical power engineering</topic><topic>Electrical machines</topic><topic>Electrical power engineering</topic><topic>Electronics</topic><topic>EMT-type programs</topic><topic>Exact sciences and technology</topic><topic>HVDC transmission</topic><topic>Insulated gate bipolar transistors</topic><topic>Integrated circuit modeling</topic><topic>Mathematical model</topic><topic>modular multilevel converter (MMC)</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Power electronics, power supplies</topic><topic>Power networks and lines</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Switches</topic><topic>switching function</topic><topic>Voltage control</topic><topic>voltage-source converter (VSC)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saad, Hani</creatorcontrib><creatorcontrib>Dennetière, Sébastien</creatorcontrib><creatorcontrib>Mahseredjian, Jean</creatorcontrib><creatorcontrib>Delarue, Philippe</creatorcontrib><creatorcontrib>Guillaud, Xavier</creatorcontrib><creatorcontrib>Peralta, Jaime</creatorcontrib><creatorcontrib>Nguefeu, Samuel</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on power delivery</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Saad, Hani</au><au>Dennetière, Sébastien</au><au>Mahseredjian, Jean</au><au>Delarue, Philippe</au><au>Guillaud, Xavier</au><au>Peralta, Jaime</au><au>Nguefeu, Samuel</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modular Multilevel Converter Models for Electromagnetic Transients</atitle><jtitle>IEEE transactions on power delivery</jtitle><stitle>TPWRD</stitle><date>2014-06-01</date><risdate>2014</risdate><volume>29</volume><issue>3</issue><spage>1481</spage><epage>1489</epage><pages>1481-1489</pages><issn>0885-8977</issn><eissn>1937-4208</eissn><coden>ITPDE5</coden><abstract>Modular multilevel converters (MMCs) may contain numerous insulated-gate bipolar transistors. The modeling of such converters for electromagnetic transient-type (EMT-type) simulations is complex. Detailed models used in MMC-HVDC simulations may require very large computing times. Simplified and averaged models have been proposed in the past to overcome this problem. In this paper, existing averaged and simplified models are improved in order to increase their range of applications. The models are compared and analyzed for different transient events on an MMC-HVDC system.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TPWRD.2013.2285633</doi><tpages>9</tpages></addata></record> |
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subjects | Applied sciences Average-value model (AVM) Capacitors Computational modeling Convertors Direct current networks Electrical engineering. Electrical power engineering Electrical machines Electrical power engineering Electronics EMT-type programs Exact sciences and technology HVDC transmission Insulated gate bipolar transistors Integrated circuit modeling Mathematical model modular multilevel converter (MMC) Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies Power networks and lines Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switches switching function Voltage control voltage-source converter (VSC) |
title | Modular Multilevel Converter Models for Electromagnetic Transients |
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