Epitaxial Tunnel Layer Structure for P-Channel Tunnel FET Improvement

The tunnel field-effect transistor (FET) is a promising candidate for use in ultralow-power applications because of its distinct operation principle, namely, band to band tunneling (BTBT). However, the ON-state current of the tunnel device is extremely low because of the poor tunneling efficiency of...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-12, Vol.60 (12), p.4098-4104
Hauptverfasser:	Wang, Pei-Yu, Tsui, Bing-Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	Band to band tunneling Doping epitaxial tunnel layer (ETL) Field effect transistors Logic gates Photonic band gap Silicon silicon-germanium ({\rm Si}_{\rm x}{\rm Ge}_{1\hbox{-}{\rm x}}) subthreshold swing (SS) tunnel field-effect transistor Tunneling vertical tunneling
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