Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter Applications

This work reports the development and fabrication of large area AlGaN/GaN-on-Si HFETs for the use in highly-efficient fast-switching power converters. High performance is demonstrated by full characterization of static- and dynamic-parameters and a direct comparison to two commercial state-of-the-ar...

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Hauptverfasser:	Reiner, R., Waltereit, P., Benkhelifa, F., Muller, S., Wespel, M., Quay, R., Schlechtweg, M., Mikulla, M., Ambacher, O.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Current measurement Electrical resistance measurement Gallium nitride HEMTs Logic gates MODFETs Resistance
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creator	Reiner, R. Waltereit, P. Benkhelifa, F. Muller, S. Wespel, M. Quay, R. Schlechtweg, M. Mikulla, M. Ambacher, O.
description	This work reports the development and fabrication of large area AlGaN/GaN-on-Si HFETs for the use in highly-efficient fast-switching power converters. High performance is demonstrated by full characterization of static- and dynamic-parameters and a direct comparison to two commercial state-of-the-art silicon power devices. Compared to their silicon counterparts the GaN-device achieves by a factor of 3 lower static area specific on-state resistance RON×A, and by a factor of 3 lower static on-state resistance times gate charge product RON×Q. In switching tests the device achieves a low dynamic dispersion and low switching losses. Furthermore in this work a sophisticated measurement setup for characterization of dynamic parameters is developed and demonstrated. Characterization and test conditions are adapted for the use in fast-switching power converter applications.
doi_str_mv	10.1109/CSICS.2013.6659219
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High performance is demonstrated by full characterization of static- and dynamic-parameters and a direct comparison to two commercial state-of-the-art silicon power devices. Compared to their silicon counterparts the GaN-device achieves by a factor of 3 lower static area specific on-state resistance RON×A, and by a factor of 3 lower static on-state resistance times gate charge product RON×Q. In switching tests the device achieves a low dynamic dispersion and low switching losses. Furthermore in this work a sophisticated measurement setup for characterization of dynamic parameters is developed and demonstrated. Characterization and test conditions are adapted for the use in fast-switching power converter applications.</abstract><pub>IEEE</pub><doi>10.1109/CSICS.2013.6659219</doi><tpages>4</tpages></addata></record>
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subjects	Current measurement Electrical resistance measurement Gallium nitride HEMTs Logic gates MODFETs Resistance
title	Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter Applications
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