Shape of epitaxial Ge islands on Si(100) surfaces

The surface morphology of Ge layers, obtained by Ge deposition on the Si(100) surface and on the Si(100) surface covered with ultrathin SiO 2 films, is studied with scanning tunneling microscopy. The SiO 2 film is partly decomposed at temperatures above 500 °C and, therefore, it does not prevent the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ponomarev, K. E., Shklyaev, A. A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Epitaxial growth Ge/Si heterostructures Shape Silicon Substrates Surface morphology Surface treatment
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