Shape of epitaxial Ge islands on Si(100) surfaces
The surface morphology of Ge layers, obtained by Ge deposition on the Si(100) surface and on the Si(100) surface covered with ultrathin SiO 2 films, is studied with scanning tunneling microscopy. The SiO 2 film is partly decomposed at temperatures above 500 °C and, therefore, it does not prevent the...
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creator | Ponomarev, K. E. Shklyaev, A. A. |
description | The surface morphology of Ge layers, obtained by Ge deposition on the Si(100) surface and on the Si(100) surface covered with ultrathin SiO 2 films, is studied with scanning tunneling microscopy. The SiO 2 film is partly decomposed at temperatures above 500 °C and, therefore, it does not prevent the Ge epitaxial growth with respect to the crystalline structure of the Si substrate. We found that the presence of the SiO 2 film leads to the formation of relaxed Ge epitaxial islands, which differ from strained Ge islands that form on bare Si(100) surfaces and contain a significant amount of Si due to the strain-induced Si diffusion from the substrate. The results show that the use of the SiO 2 film allows one to control the Ge-Si composition of the islands and their shape. |
doi_str_mv | 10.1109/EDM.2013.6641934 |
format | Conference Proceeding |
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E. ; Shklyaev, A. A.</creator><creatorcontrib>Ponomarev, K. E. ; Shklyaev, A. A.</creatorcontrib><description>The surface morphology of Ge layers, obtained by Ge deposition on the Si(100) surface and on the Si(100) surface covered with ultrathin SiO 2 films, is studied with scanning tunneling microscopy. The SiO 2 film is partly decomposed at temperatures above 500 °C and, therefore, it does not prevent the Ge epitaxial growth with respect to the crystalline structure of the Si substrate. We found that the presence of the SiO 2 film leads to the formation of relaxed Ge epitaxial islands, which differ from strained Ge islands that form on bare Si(100) surfaces and contain a significant amount of Si due to the strain-induced Si diffusion from the substrate. The results show that the use of the SiO 2 film allows one to control the Ge-Si composition of the islands and their shape.</description><identifier>ISSN: 1815-3712</identifier><identifier>ISBN: 9781479907618</identifier><identifier>ISBN: 1479907618</identifier><identifier>EISBN: 1479907626</identifier><identifier>EISBN: 9781479907625</identifier><identifier>DOI: 10.1109/EDM.2013.6641934</identifier><language>eng</language><publisher>IEEE</publisher><subject>Epitaxial growth ; Ge/Si heterostructures ; Shape ; Silicon ; Substrates ; Surface morphology ; Surface treatment</subject><ispartof>2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, 2013, p.37-40</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6641934$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6641934$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ponomarev, K. E.</creatorcontrib><creatorcontrib>Shklyaev, A. A.</creatorcontrib><title>Shape of epitaxial Ge islands on Si(100) surfaces</title><title>2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices</title><addtitle>EDM</addtitle><description>The surface morphology of Ge layers, obtained by Ge deposition on the Si(100) surface and on the Si(100) surface covered with ultrathin SiO 2 films, is studied with scanning tunneling microscopy. The SiO 2 film is partly decomposed at temperatures above 500 °C and, therefore, it does not prevent the Ge epitaxial growth with respect to the crystalline structure of the Si substrate. We found that the presence of the SiO 2 film leads to the formation of relaxed Ge epitaxial islands, which differ from strained Ge islands that form on bare Si(100) surfaces and contain a significant amount of Si due to the strain-induced Si diffusion from the substrate. The results show that the use of the SiO 2 film allows one to control the Ge-Si composition of the islands and their shape.</description><subject>Epitaxial growth</subject><subject>Ge/Si heterostructures</subject><subject>Shape</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Surface morphology</subject><subject>Surface treatment</subject><issn>1815-3712</issn><isbn>9781479907618</isbn><isbn>1479907618</isbn><isbn>1479907626</isbn><isbn>9781479907625</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j0FLAzEUhCMqWOveBS856mHXN0n2ZXOUWqtQ8dDeS7ZNMLK2y6aC_nsL1tMw8DF8I8Q1qALI3U8fXytF0BWzgdPmRFzCWOfIsuJTUTjb_Hc0Z2KEBnWpLdSFKHL-ICKNA6LtSGDx7vsgd1GGPu39d_KdnAWZcue3myx3W7lItyC6k_lriH4d8pU4j77LoTjmWCyfpsvJczl_m71MHuZlcrQvbSSnvG7ajbetUgbW8drommPLzOQidOuMYQQ-uLYA6qjaGMDKghH1WNz8zaYQwqof0qcfflbHw_oX9SpDXA</recordid><startdate>201307</startdate><enddate>201307</enddate><creator>Ponomarev, K. E.</creator><creator>Shklyaev, A. A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201307</creationdate><title>Shape of epitaxial Ge islands on Si(100) surfaces</title><author>Ponomarev, K. E. ; Shklyaev, A. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-7f092a38bda7b2241796c4356fb66609f13b94461e6814b1115f2bfe1627161f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Epitaxial growth</topic><topic>Ge/Si heterostructures</topic><topic>Shape</topic><topic>Silicon</topic><topic>Substrates</topic><topic>Surface morphology</topic><topic>Surface treatment</topic><toplevel>online_resources</toplevel><creatorcontrib>Ponomarev, K. E.</creatorcontrib><creatorcontrib>Shklyaev, A. A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ponomarev, K. E.</au><au>Shklyaev, A. A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Shape of epitaxial Ge islands on Si(100) surfaces</atitle><btitle>2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices</btitle><stitle>EDM</stitle><date>2013-07</date><risdate>2013</risdate><spage>37</spage><epage>40</epage><pages>37-40</pages><issn>1815-3712</issn><isbn>9781479907618</isbn><isbn>1479907618</isbn><eisbn>1479907626</eisbn><eisbn>9781479907625</eisbn><abstract>The surface morphology of Ge layers, obtained by Ge deposition on the Si(100) surface and on the Si(100) surface covered with ultrathin SiO 2 films, is studied with scanning tunneling microscopy. The SiO 2 film is partly decomposed at temperatures above 500 °C and, therefore, it does not prevent the Ge epitaxial growth with respect to the crystalline structure of the Si substrate. We found that the presence of the SiO 2 film leads to the formation of relaxed Ge epitaxial islands, which differ from strained Ge islands that form on bare Si(100) surfaces and contain a significant amount of Si due to the strain-induced Si diffusion from the substrate. The results show that the use of the SiO 2 film allows one to control the Ge-Si composition of the islands and their shape.</abstract><pub>IEEE</pub><doi>10.1109/EDM.2013.6641934</doi><tpages>4</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Epitaxial growth Ge/Si heterostructures Shape Silicon Substrates Surface morphology Surface treatment |
title | Shape of epitaxial Ge islands on Si(100) surfaces |
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