Energy-Efficient Non-Boolean Computing With Spin Neurons and Resistive Memory
Emerging nonvolatile resistive memory technologies can be potentially suitable for computationally expensive analog pattern-matching tasks. However, the use of CMOS analog circuits with resistive crossbar memory (RCM) would result in large power consumption and poor scalability, thereby eschewing th...
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Veröffentlicht in: | IEEE transactions on nanotechnology 2014-01, Vol.13 (1), p.23-34 |
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Sprache: | eng |
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Zusammenfassung: | Emerging nonvolatile resistive memory technologies can be potentially suitable for computationally expensive analog pattern-matching tasks. However, the use of CMOS analog circuits with resistive crossbar memory (RCM) would result in large power consumption and poor scalability, thereby eschewing the benefits of RCM-based computation. We explore the potential of emerging spin-torque devices for RCM-based approximate computing circuits. Emerging spin-torque switching techniques may lead to nanoscale, current-mode spintronic switches that can be used for energy-efficient analog-mode data processing. We propose the use of such low-voltage, fast-switching, magnetometallic "spin neurons" for ultralow power non-Boolean computing with RCM. We present the design of analog associative memory for face recognition using RCM, where, substituting conventional analog circuits with spin neurons can achieve ~100× lower power consumption. |
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ISSN: | 1536-125X 1941-0085 |
DOI: | 10.1109/TNANO.2013.2286424 |