Features of wafer - Mo joining by sintering of silver paste for large area silicon devices

Features of wafer - Mo joining by sintering of silver paste for large area silicon devices

Conjunction of silicon crystals with surface over 10 cm 2 with molybdenum discs by means of silver paste sintering is being discussed. It is shown that to ensure strength of joint and low thermomechanical stress selection of dependencies of pressure and temperature on time is very important. It is n...

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Hauptverfasser: Chernikov, A. A., Stavtsev, A. V., Surma, A. M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Crystals
Heating
High power discrete device
Joints
Packaging
Power cycling
Reliability
Silicon
Silver
Stress
Surface treatment
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creator Chernikov, A. A.
Stavtsev, A. V.
Surma, A. M.
description Conjunction of silicon crystals with surface over 10 cm 2 with molybdenum discs by means of silver paste sintering is being discussed. It is shown that to ensure strength of joint and low thermomechanical stress selection of dependencies of pressure and temperature on time is very important. It is necessary to ensure thermal stability of multilayer metal process on jointed surfaces. Experimental elements are characterized by reduced thermal resistance and high cycle stability.
doi_str_mv 10.1109/EPE.2013.6631822
format Conference Proceeding
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Experimental elements are characterized by reduced thermal resistance and high cycle stability.</description><subject>Crystals</subject><subject>Heating</subject><subject>High power discrete device</subject><subject>Joints</subject><subject>Packaging</subject><subject>Power cycling</subject><subject>Reliability</subject><subject>Silicon</subject><subject>Silver</subject><subject>Stress</subject><subject>Surface treatment</subject><isbn>9781479901166</isbn><isbn>1479901164</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkD1PwzAYhM2ABCrZkVj8BxL8_TGiKgWkVjB0Yqls53XlKiSVHYr670lFp9PdPbrhEHqkpKGU2Of2s20YobxRilPD2A2qrDZUaGsJpUrdoaqUAyGEak2lEPfoawVu-slQ8Bjxr4uQcY03Iz6MaUjDHvszLmmYIF_MjJTUn2bm6MoEOI4Z9y7vAbsM7tKlMA64g1MKUB7QbXR9geqqC7RdtdvlW73-eH1fvqzrZMlUO85FF0yw0WrllTFOGRm4tKpTikaQQRPNBKNSeWDMkBi95N4y54WaQ75AT_-zCQB2x5y-XT7vrgfwP1teT_U</recordid><startdate>201309</startdate><enddate>201309</enddate><creator>Chernikov, A. 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M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Features of wafer - Mo joining by sintering of silver paste for large area silicon devices</atitle><btitle>2013 15th European Conference on Power Electronics and Applications (EPE)</btitle><stitle>EPE</stitle><date>2013-09</date><risdate>2013</risdate><spage>1</spage><epage>7</epage><pages>1-7</pages><eisbn>9781479901166</eisbn><eisbn>1479901164</eisbn><abstract>Conjunction of silicon crystals with surface over 10 cm 2 with molybdenum discs by means of silver paste sintering is being discussed. It is shown that to ensure strength of joint and low thermomechanical stress selection of dependencies of pressure and temperature on time is very important. It is necessary to ensure thermal stability of multilayer metal process on jointed surfaces. 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subjects Crystals
Heating
High power discrete device
Joints
Packaging
Power cycling
Reliability
Silicon
Silver
Stress
Surface treatment
title Features of wafer - Mo joining by sintering of silver paste for large area silicon devices
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