1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer

1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well (MQW) lasers with a p-AlInAs electron stopper layer have been fabricated. The electron stopper layer was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-S...

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Veröffentlicht in:	IEEE photonics technology letters 1998-04, Vol.10 (4), p.495-497
Hauptverfasser:	Takemasa, K., Munakata, T., Kobayashi, M., Wada, H., Kamijoh, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrons Light sources Optical interconnections Quantum well devices Quantum well lasers Semiconductor lasers Subscriber loops Temperature distribution Thermoelectricity Threshold current
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