1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer
1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well (MQW) lasers with a p-AlInAs electron stopper layer have been fabricated. The electron stopper layer was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-S...
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| Veröffentlicht in: | IEEE photonics technology letters 1998-04, Vol.10 (4), p.495-497 |
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| container_title | IEEE photonics technology letters |
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| creator | Takemasa, K. Munakata, T. Kobayashi, M. Wada, H. Kamijoh, T. |
| description | 1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well (MQW) lasers with a p-AlInAs electron stopper layer have been fabricated. The electron stopper layer was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum operating temperature of 155/spl deg/C was achieved, which was 20/spl deg/C higher than that without the stopper layer. |
| doi_str_mv | 10.1109/68.662572 |
| format | Article |
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The electron stopper layer was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum operating temperature of 155/spl deg/C was achieved, which was 20/spl deg/C higher than that without the stopper layer.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.662572</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrons ; Light sources ; Optical interconnections ; Quantum well devices ; Quantum well lasers ; Semiconductor lasers ; Subscriber loops ; Temperature distribution ; Thermoelectricity ; Threshold current</subject><ispartof>IEEE photonics technology letters, 1998-04, Vol.10 (4), p.495-497</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c246t-59c366a567cb3694d0f0f846fe91fa7b89487a3df431845348932909808fb8623</citedby><cites>FETCH-LOGICAL-c246t-59c366a567cb3694d0f0f846fe91fa7b89487a3df431845348932909808fb8623</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/662572$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/662572$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Takemasa, K.</creatorcontrib><creatorcontrib>Munakata, T.</creatorcontrib><creatorcontrib>Kobayashi, M.</creatorcontrib><creatorcontrib>Wada, H.</creatorcontrib><creatorcontrib>Kamijoh, T.</creatorcontrib><title>1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well (MQW) lasers with a p-AlInAs electron stopper layer have been fabricated. The electron stopper layer was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum operating temperature of 155/spl deg/C was achieved, which was 20/spl deg/C higher than that without the stopper layer.</description><subject>Electrons</subject><subject>Light sources</subject><subject>Optical interconnections</subject><subject>Quantum well devices</subject><subject>Quantum well lasers</subject><subject>Semiconductor lasers</subject><subject>Subscriber loops</subject><subject>Temperature distribution</subject><subject>Thermoelectricity</subject><subject>Threshold current</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kLFOwzAQhi0EEqUwsDJ5ZXDxxY5jj1UFpVIlFpgjJzmLICcNdqqq78Yz8Ey4tDDdJ933n3Q_IbfAZwDcPCg9UyrLi-yMTMBIYBwKeZ6YJwYQ-SW5ivGDc5C5kBPiYCbY91dH535pV_08sj-gcQy27bGh3daP7eCRfW5tP247tkPvqbcRQ6S7dnynlg4p95tCj_UYNn2Kb4YBQ_L2GK7JhbM-4s1pTsnb0-Pr4pmtX5arxXzN6kyqkeWmFkrZXBV1JZSRDXfcaakcGnC2qLSRurCicVKAPjygjcgMN5prV2mViSm5P96twybGgK4cQtvZsC-Bl4eCSqXLY0HJvTu6LSL-e6flD82_X9c</recordid><startdate>199804</startdate><enddate>199804</enddate><creator>Takemasa, K.</creator><creator>Munakata, T.</creator><creator>Kobayashi, M.</creator><creator>Wada, H.</creator><creator>Kamijoh, T.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>199804</creationdate><title>1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer</title><author>Takemasa, K. ; Munakata, T. ; Kobayashi, M. ; Wada, H. ; Kamijoh, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-59c366a567cb3694d0f0f846fe91fa7b89487a3df431845348932909808fb8623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Electrons</topic><topic>Light sources</topic><topic>Optical interconnections</topic><topic>Quantum well devices</topic><topic>Quantum well lasers</topic><topic>Semiconductor lasers</topic><topic>Subscriber loops</topic><topic>Temperature distribution</topic><topic>Thermoelectricity</topic><topic>Threshold current</topic><toplevel>online_resources</toplevel><creatorcontrib>Takemasa, K.</creatorcontrib><creatorcontrib>Munakata, T.</creatorcontrib><creatorcontrib>Kobayashi, M.</creatorcontrib><creatorcontrib>Wada, H.</creatorcontrib><creatorcontrib>Kamijoh, T.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Takemasa, K.</au><au>Munakata, T.</au><au>Kobayashi, M.</au><au>Wada, H.</au><au>Kamijoh, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1998-04</date><risdate>1998</risdate><volume>10</volume><issue>4</issue><spage>495</spage><epage>497</epage><pages>495-497</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well (MQW) lasers with a p-AlInAs electron stopper layer have been fabricated. The electron stopper layer was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum operating temperature of 155/spl deg/C was achieved, which was 20/spl deg/C higher than that without the stopper layer.</abstract><pub>IEEE</pub><doi>10.1109/68.662572</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE photonics technology letters, 1998-04, Vol.10 (4), p.495-497 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_ieee_primary_662572 |
| source | IEEE Xplore |
| subjects | Electrons Light sources Optical interconnections Quantum well devices Quantum well lasers Semiconductor lasers Subscriber loops Temperature distribution Thermoelectricity Threshold current |
| title | 1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer |
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