Mixed signal integrated circuits based on GaAs HEMTs

During the past five years numerous mixed signal integrated circuits (ICs) have been designed, processed, and characterized based on our 0.2 /spl mu/m gate length AlGaAs/GaAs quantum well HEMT technology. Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwav...

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Veröffentlicht in:	IEEE transactions on very large scale integration (VLSI) systems 1998-03, Vol.6 (1), p.6-17
Hauptverfasser:	Thiede, A., Zhi-Gong, Schlechtweg, M., Lang, M., Leber, P., Zhihao Lao, Nowotny, U., Hurm, V., Rieger-Motzer, M., Ludwig, M., Sedler, M., Kohler, K., Bronner, W., Hornung, J., Hulsmann, A., Kaufel, G., Raynor, B., Schneider, J., Jakobus, T., Schroth, J., Berroth, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Antenna arrays Gallium arsenide HEMTs Integrated circuit technology Mixed analog digital integrated circuits MODFETs Optical materials Phased arrays Process design Signal design
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