NH3 sensing characteristics of pure and Al modified WO3 thin films
Ammonia sensing properties of pure and Al modified WO 3 thin films prepared using RF sputtering have been investigated. Both the sensor films exhibited a maximum response at an operating temperature of 250°C. Modification with Al has been demonstrated to improve the response kinetics in particular t...
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| creator | Goyal, C. P. Ramgir, N. S. Sharma, P. K. Datta, N. Kaur, M. Parey, V. Debnath, A. K. Haque, F. Z. Aswal, D. K. Gupta, S. K. |
| description | Ammonia sensing properties of pure and Al modified WO 3 thin films prepared using RF sputtering have been investigated. Both the sensor films exhibited a maximum response at an operating temperature of 250°C. Modification with Al has been demonstrated to improve the response kinetics in particular the response time (6 min) in comparison to that of pure WO 3 (8 min) towards NH 3 (100 ppm). Interestingly, both the sensor films showed an increase in resistance i.e., a p-type behavior upon exposure to NH 3 . |
| doi_str_mv | 10.1109/ICANMEET.2013.6609364 |
| format | Conference Proceeding |
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P. ; Ramgir, N. S. ; Sharma, P. K. ; Datta, N. ; Kaur, M. ; Parey, V. ; Debnath, A. K. ; Haque, F. Z. ; Aswal, D. K. ; Gupta, S. K.</creator><creatorcontrib>Goyal, C. P. ; Ramgir, N. S. ; Sharma, P. K. ; Datta, N. ; Kaur, M. ; Parey, V. ; Debnath, A. K. ; Haque, F. Z. ; Aswal, D. K. ; Gupta, S. K.</creatorcontrib><description>Ammonia sensing properties of pure and Al modified WO 3 thin films prepared using RF sputtering have been investigated. Both the sensor films exhibited a maximum response at an operating temperature of 250°C. Modification with Al has been demonstrated to improve the response kinetics in particular the response time (6 min) in comparison to that of pure WO 3 (8 min) towards NH 3 (100 ppm). Interestingly, both the sensor films showed an increase in resistance i.e., a p-type behavior upon exposure to NH 3 .</description><identifier>ISBN: 9781479913770</identifier><identifier>ISBN: 1479913774</identifier><identifier>EISBN: 9781479913794</identifier><identifier>EISBN: 1479913782</identifier><identifier>EISBN: 9781479913787</identifier><identifier>EISBN: 1479913790</identifier><identifier>DOI: 10.1109/ICANMEET.2013.6609364</identifier><language>eng</language><publisher>IEEE</publisher><subject>Educational institutions ; NH 3 ; Radio frequency ; RF sputtering ; Sensor ; Substrates ; Temperature sensors ; Thin Film ; WO 3</subject><ispartof>International Conference on Advanced Nanomaterials & Emerging Engineering Technologies, 2013, p.560-562</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6609364$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6609364$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Goyal, C. 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Modification with Al has been demonstrated to improve the response kinetics in particular the response time (6 min) in comparison to that of pure WO 3 (8 min) towards NH 3 (100 ppm). Interestingly, both the sensor films showed an increase in resistance i.e., a p-type behavior upon exposure to NH 3 .</description><subject>Educational institutions</subject><subject>NH 3</subject><subject>Radio frequency</subject><subject>RF sputtering</subject><subject>Sensor</subject><subject>Substrates</subject><subject>Temperature sensors</subject><subject>Thin Film</subject><subject>WO 3</subject><isbn>9781479913770</isbn><isbn>1479913774</isbn><isbn>9781479913794</isbn><isbn>1479913782</isbn><isbn>9781479913787</isbn><isbn>1479913790</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVj81Kw0AUhUdEUGqeQIR5gcR752YymWUt0Qq13VRclsn82JEkLZm48O0ttBs5i8O3OXyHsUeEAhH009tivn5vmm0hAKmoKtBUlVcs06rGUmmNpHR5_Y8V3LIspW8AQKWkBHXHntdL4skPKQ5f3O7NaOzkx5imaBM_BH78GT03g-PzjvcHF0P0jn9uiE_7OPAQuz7ds5tguuSzS8_Yx0uzXSzz1eb1ZLnKIyo55bIWriZbeiGCIzIuWG2xNaHWxjrZkm2VCAIJ3SmIEhygkQ6olFq3hmbs4bwbvfe74xh7M_7uLs_pD9tyTDk</recordid><startdate>201307</startdate><enddate>201307</enddate><creator>Goyal, C. P.</creator><creator>Ramgir, N. S.</creator><creator>Sharma, P. K.</creator><creator>Datta, N.</creator><creator>Kaur, M.</creator><creator>Parey, V.</creator><creator>Debnath, A. K.</creator><creator>Haque, F. Z.</creator><creator>Aswal, D. K.</creator><creator>Gupta, S. K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201307</creationdate><title>NH3 sensing characteristics of pure and Al modified WO3 thin films</title><author>Goyal, C. P. ; Ramgir, N. S. ; Sharma, P. K. ; Datta, N. ; Kaur, M. ; Parey, V. ; Debnath, A. K. ; Haque, F. Z. ; Aswal, D. K. ; Gupta, S. 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K.</creatorcontrib><creatorcontrib>Gupta, S. K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Goyal, C. P.</au><au>Ramgir, N. S.</au><au>Sharma, P. K.</au><au>Datta, N.</au><au>Kaur, M.</au><au>Parey, V.</au><au>Debnath, A. K.</au><au>Haque, F. Z.</au><au>Aswal, D. K.</au><au>Gupta, S. K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>NH3 sensing characteristics of pure and Al modified WO3 thin films</atitle><btitle>International Conference on Advanced Nanomaterials & Emerging Engineering Technologies</btitle><stitle>ICANMEET</stitle><date>2013-07</date><risdate>2013</risdate><spage>560</spage><epage>562</epage><pages>560-562</pages><isbn>9781479913770</isbn><isbn>1479913774</isbn><eisbn>9781479913794</eisbn><eisbn>1479913782</eisbn><eisbn>9781479913787</eisbn><eisbn>1479913790</eisbn><abstract>Ammonia sensing properties of pure and Al modified WO 3 thin films prepared using RF sputtering have been investigated. Both the sensor films exhibited a maximum response at an operating temperature of 250°C. Modification with Al has been demonstrated to improve the response kinetics in particular the response time (6 min) in comparison to that of pure WO 3 (8 min) towards NH 3 (100 ppm). Interestingly, both the sensor films showed an increase in resistance i.e., a p-type behavior upon exposure to NH 3 .</abstract><pub>IEEE</pub><doi>10.1109/ICANMEET.2013.6609364</doi><tpages>3</tpages></addata></record> |
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| ispartof | International Conference on Advanced Nanomaterials & Emerging Engineering Technologies, 2013, p.560-562 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Educational institutions NH 3 Radio frequency RF sputtering Sensor Substrates Temperature sensors Thin Film WO 3 |
| title | NH3 sensing characteristics of pure and Al modified WO3 thin films |
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