Design for Manufacturing With Emerging Nanolithography
In this paper, we survey key design for manufacturing issues for extreme scaling with emerging nanolithography technologies, including double/multiple patterning lithography, extreme ultraviolet lithography, and electron-beam lithography. These nanolithography and nanopatterning technologies have di...
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| Veröffentlicht in: | IEEE transactions on computer-aided design of integrated circuits and systems 2013-10, Vol.32 (10), p.1453-1472 |
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| container_title | IEEE transactions on computer-aided design of integrated circuits and systems |
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| creator | Pan, D. Z. Bei Yu Jhih-Rong Gao |
| description | In this paper, we survey key design for manufacturing issues for extreme scaling with emerging nanolithography technologies, including double/multiple patterning lithography, extreme ultraviolet lithography, and electron-beam lithography. These nanolithography and nanopatterning technologies have different manufacturing processes and their unique challenges to very large scale integration (VLSI) physical design, mask synthesis, and so on. It is essential to have close VLSI design and underlying process technology co-optimization to achieve high product quality (power/performance, etc.) and yield while making future scaling cost-effective and worthwhile. Recent results and examples will be discussed to show the enablement and effectiveness of such design and process integration, including lithography model/analysis, mask synthesis, and lithography friendly physical design. |
| doi_str_mv | 10.1109/TCAD.2013.2276751 |
| format | Article |
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Recent results and examples will be discussed to show the enablement and effectiveness of such design and process integration, including lithography model/analysis, mask synthesis, and lithography friendly physical design.</description><identifier>ISSN: 0278-0070</identifier><identifier>EISSN: 1937-4151</identifier><identifier>DOI: 10.1109/TCAD.2013.2276751</identifier><identifier>CODEN: ITCSDI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Design engineering ; Design for manufacturing ; double patterning ; e-beam lithography (EBL) ; Electron beam lithography ; EUV lithography (EUVL) ; Integrated circuits ; Layout ; Lithography ; Logic gates ; multiple patterning ; Nanocomposites ; Nanolithography ; Nanomaterials ; Nanostructure ; Pattern matching ; physical design ; Ultraviolet sources ; Very large scale integration</subject><ispartof>IEEE transactions on computer-aided design of integrated circuits and systems, 2013-10, Vol.32 (10), p.1453-1472</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Z.</creatorcontrib><creatorcontrib>Bei Yu</creatorcontrib><creatorcontrib>Jhih-Rong Gao</creatorcontrib><title>Design for Manufacturing With Emerging Nanolithography</title><title>IEEE transactions on computer-aided design of integrated circuits and systems</title><addtitle>TCAD</addtitle><description>In this paper, we survey key design for manufacturing issues for extreme scaling with emerging nanolithography technologies, including double/multiple patterning lithography, extreme ultraviolet lithography, and electron-beam lithography. These nanolithography and nanopatterning technologies have different manufacturing processes and their unique challenges to very large scale integration (VLSI) physical design, mask synthesis, and so on. It is essential to have close VLSI design and underlying process technology co-optimization to achieve high product quality (power/performance, etc.) and yield while making future scaling cost-effective and worthwhile. Recent results and examples will be discussed to show the enablement and effectiveness of such design and process integration, including lithography model/analysis, mask synthesis, and lithography friendly physical design.</description><subject>Design engineering</subject><subject>Design for manufacturing</subject><subject>double patterning</subject><subject>e-beam lithography (EBL)</subject><subject>Electron beam lithography</subject><subject>EUV lithography (EUVL)</subject><subject>Integrated circuits</subject><subject>Layout</subject><subject>Lithography</subject><subject>Logic gates</subject><subject>multiple patterning</subject><subject>Nanocomposites</subject><subject>Nanolithography</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Pattern matching</subject><subject>physical design</subject><subject>Ultraviolet sources</subject><subject>Very large scale integration</subject><issn>0278-0070</issn><issn>1937-4151</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhhdRsFZ_gHgJePGSurOf2WOp9QOqXioel00ySVPSpO4mh_57E1o8CAPDDM87DA8ht0BnANQ8rhfzpxmjwGeMaaUlnJEJGK5jARLOyYQyncSUanpJrkLYUgpCMjMh6glDVTZR0fro3TV94bKu91VTRt9Vt4mWO_TlOH24pq2HTVt6t98crslF4eqAN6c-JV_Py_XiNV59vrwt5qs440x1scmUZholx8RwmXDMmASRGkdl4kwhMAcqhqKYJLkCnnOTOg1pJlQuUxR8Sh6Od_e-_ekxdHZXhQzr2jXY9sGCEIlmggMM6P0_dNv2vhm-GygueKIVHyk4UplvQ_BY2L2vds4fLFA7mrSjSTuatCeTQ-bumKkQ8Y9XigJlkv8COUls9A</recordid><startdate>20131001</startdate><enddate>20131001</enddate><creator>Pan, D. 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Z. ; Bei Yu ; Jhih-Rong Gao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c326t-9c6727e53e893583ec2514b9a058a9f4ed1041040e88d613d39ba71bc46d5be43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Design engineering</topic><topic>Design for manufacturing</topic><topic>double patterning</topic><topic>e-beam lithography (EBL)</topic><topic>Electron beam lithography</topic><topic>EUV lithography (EUVL)</topic><topic>Integrated circuits</topic><topic>Layout</topic><topic>Lithography</topic><topic>Logic gates</topic><topic>multiple patterning</topic><topic>Nanocomposites</topic><topic>Nanolithography</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Pattern matching</topic><topic>physical design</topic><topic>Ultraviolet sources</topic><topic>Very large scale integration</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pan, D. Z.</creatorcontrib><creatorcontrib>Bei Yu</creatorcontrib><creatorcontrib>Jhih-Rong Gao</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pan, D. Z.</au><au>Bei Yu</au><au>Jhih-Rong Gao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design for Manufacturing With Emerging Nanolithography</atitle><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle><stitle>TCAD</stitle><date>2013-10-01</date><risdate>2013</risdate><volume>32</volume><issue>10</issue><spage>1453</spage><epage>1472</epage><pages>1453-1472</pages><issn>0278-0070</issn><eissn>1937-4151</eissn><coden>ITCSDI</coden><abstract>In this paper, we survey key design for manufacturing issues for extreme scaling with emerging nanolithography technologies, including double/multiple patterning lithography, extreme ultraviolet lithography, and electron-beam lithography. These nanolithography and nanopatterning technologies have different manufacturing processes and their unique challenges to very large scale integration (VLSI) physical design, mask synthesis, and so on. It is essential to have close VLSI design and underlying process technology co-optimization to achieve high product quality (power/performance, etc.) and yield while making future scaling cost-effective and worthwhile. Recent results and examples will be discussed to show the enablement and effectiveness of such design and process integration, including lithography model/analysis, mask synthesis, and lithography friendly physical design.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCAD.2013.2276751</doi><tpages>20</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Design engineering Design for manufacturing double patterning e-beam lithography (EBL) Electron beam lithography EUV lithography (EUVL) Integrated circuits Layout Lithography Logic gates multiple patterning Nanocomposites Nanolithography Nanomaterials Nanostructure Pattern matching physical design Ultraviolet sources Very large scale integration |
| title | Design for Manufacturing With Emerging Nanolithography |
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