Investigation of chromium contamination induced TDDB degradation in MOSFET

For the first time, we have demonstrated the reliability degradation of gate dielectric due to contamination of chromium in the silicon substrate. Before semiconductor processing, it is difficult to detect the chromium in bare wafer because the Cr-ion is quite low concentration and stable in the Si-...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chih-Jen Hsiao, An-Shun Teng, Wei-Chuan Chang, Yi-Yueh Chen, Ming-Yi Lee, Yuan-Shan Tsai, Ta-Wei Lee, Ding-Jang Lin, Dai, Allen, Chih-Yuan Lu
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chromium Degradation Dielectrics Logic gates Oxidation Reliability
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