Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50

Polycrystalline zinc oxide (ZnO) thin-film transistors with a Ta 2 O 5 high- k gate dielectric layer are fabricated by radio-frequency magnetron sputtering at room temperature. Under the optimal deposition conditions, the devices show saturation mobility values over 50 cm 2 /Vs, an ON/OFF ratio of ,...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-10, Vol.60 (10), p.3424-3429
Hauptverfasser:	Brox-Nilsen, Christian, Jidong Jin, Yi Luo, Peng Bao, Song, Aimin M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Argon High mobility Insulators Logic gates Radio frequency radio frequency (RF) sputtering room temperature Sputtering thin-film transistor (TFT) Transistors Zinc oxide zinc oxide (ZnO)
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description	Polycrystalline zinc oxide (ZnO) thin-film transistors with a Ta 2 O 5 high- k gate dielectric layer are fabricated by radio-frequency magnetron sputtering at room temperature. Under the optimal deposition conditions, the devices show saturation mobility values over 50 cm 2 /Vs, an ON/OFF ratio of , and a subthreshold voltage swing of 0.29 V/decade at a low operating voltage of 4 V. This is, to the best of our knowledge, one of the highest field-effect mobility values achieved in ZnO-based thin-film transistors by room-temperature sputtering. The stability of the devices is also examined and the sensitive dependence of the carrier mobility on the deposition conditions is discussed.
doi_str_mv	10.1109/TED.2013.2279401
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Under the optimal deposition conditions, the devices show saturation mobility values over 50 cm 2 /Vs, an ON/OFF ratio of , and a subthreshold voltage swing of 0.29 V/decade at a low operating voltage of 4 V. This is, to the best of our knowledge, one of the highest field-effect mobility values achieved in ZnO-based thin-film transistors by room-temperature sputtering. The stability of the devices is also examined and the sensitive dependence of the carrier mobility on the deposition conditions is discussed.</description><subject>Argon</subject><subject>High mobility</subject><subject>Insulators</subject><subject>Logic gates</subject><subject>Radio frequency</subject><subject>radio frequency (RF) sputtering</subject><subject>room temperature</subject><subject>Sputtering</subject><subject>thin-film transistor (TFT)</subject><subject>Transistors</subject><subject>Zinc oxide</subject><subject>zinc oxide (ZnO)</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AURQdRsFb3gpv5A4nvzWTeZJaltipUsjAiuAlJZkJH0g9motB_b0qLq8uFe-7iMHaPkCKCeSwXT6kAlKkQ2mSAF2yCSunEUEaXbAKAeWJkLq_ZTYzfY6UsExM2e9__DIMLzvKvbcHLtd8mS99veBnqbfRx2IXIP_2w5vM6BO8Cf9s1vvfDgRe_Y1Nwy666uo_u7pxT9rFclPOXZFU8v85nq6RFBZho3ZIUDnRNgNBoQmtsYzog3VhslFVWQyuyMZTKO6ozLaQlqQx1RMbKKYPTbxt2MQbXVfvgN3U4VAjVUUE1KqiOCqqzghF5OCHeOfc_J5Ubo0D-Ad5pVa4</recordid><startdate>201310</startdate><enddate>201310</enddate><creator>Brox-Nilsen, Christian</creator><creator>Jidong Jin</creator><creator>Yi Luo</creator><creator>Peng Bao</creator><creator>Song, Aimin M.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201310</creationdate><title>Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50</title><author>Brox-Nilsen, Christian ; Jidong Jin ; Yi Luo ; Peng Bao ; Song, Aimin M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1501-77c632e07a6010b761d9db9f067bd1b5d5d70c245d7558f6a4723d63596f669d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Argon</topic><topic>High mobility</topic><topic>Insulators</topic><topic>Logic gates</topic><topic>Radio frequency</topic><topic>radio frequency (RF) sputtering</topic><topic>room temperature</topic><topic>Sputtering</topic><topic>thin-film transistor (TFT)</topic><topic>Transistors</topic><topic>Zinc oxide</topic><topic>zinc oxide (ZnO)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Brox-Nilsen, Christian</creatorcontrib><creatorcontrib>Jidong Jin</creatorcontrib><creatorcontrib>Yi Luo</creatorcontrib><creatorcontrib>Peng Bao</creatorcontrib><creatorcontrib>Song, Aimin M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brox-Nilsen, Christian</au><au>Jidong Jin</au><au>Yi Luo</au><au>Peng Bao</au><au>Song, Aimin M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2013-10</date><risdate>2013</risdate><volume>60</volume><issue>10</issue><spage>3424</spage><epage>3429</epage><pages>3424-3429</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Polycrystalline zinc oxide (ZnO) thin-film transistors with a Ta 2 O 5 high- k gate dielectric layer are fabricated by radio-frequency magnetron sputtering at room temperature. Under the optimal deposition conditions, the devices show saturation mobility values over 50 cm 2 /Vs, an ON/OFF ratio of , and a subthreshold voltage swing of 0.29 V/decade at a low operating voltage of 4 V. This is, to the best of our knowledge, one of the highest field-effect mobility values achieved in ZnO-based thin-film transistors by room-temperature sputtering. The stability of the devices is also examined and the sensitive dependence of the carrier mobility on the deposition conditions is discussed.</abstract><pub>IEEE</pub><doi>10.1109/TED.2013.2279401</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record>
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subjects	Argon High mobility Insulators Logic gates Radio frequency radio frequency (RF) sputtering room temperature Sputtering thin-film transistor (TFT) Transistors Zinc oxide zinc oxide (ZnO)
title	Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50
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