A Gate-Width Scalable Method of Parasitic Parameter Determination for Distributed HEMT Small-Signal Equivalent Circuit
We propose a gate-width scalable method for extracting the reliable parasitic elements of the 0.1- μm GaAs metamorphic high electron-mobility transistors. This method utilizes the de-embedding scheme for coplanar waveguide (CPW) feeding structure by considering the distributed extrinsic parasitic el...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2013-10, Vol.61 (10), p.3632-3638 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Nguyen, Tung The-Lam Sam-Dong Kim |
| description | We propose a gate-width scalable method for extracting the reliable parasitic elements of the 0.1- μm GaAs metamorphic high electron-mobility transistors. This method utilizes the de-embedding scheme for coplanar waveguide (CPW) feeding structure by considering the distributed extrinsic parasitic elements in our small-signal model. The parasitic capacitances are determined based on estimation of the sub-model (the model after de-embedding the contribution of the CPW feeding structure). We perform the parameter extraction at four different gate widths of the devices to examine the scaling effect. The model shows the best S-parameter effective fitting error of 9.85% among four different extraction methods evaluated in this study over the entire gate-width variation and in a frequency range of 0.5-110 GHz. |
| doi_str_mv | 10.1109/TMTT.2013.2279360 |
| format | Article |
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This method utilizes the de-embedding scheme for coplanar waveguide (CPW) feeding structure by considering the distributed extrinsic parasitic elements in our small-signal model. The parasitic capacitances are determined based on estimation of the sub-model (the model after de-embedding the contribution of the CPW feeding structure). We perform the parameter extraction at four different gate widths of the devices to examine the scaling effect. The model shows the best S-parameter effective fitting error of 9.85% among four different extraction methods evaluated in this study over the entire gate-width variation and in a frequency range of 0.5-110 GHz.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2013.2279360</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitance ; Circuit properties ; Coplanar waveguides ; Device modeling ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Frequency measurement ; high electron-mobility transistors (HEMTs) ; Integrated circuit modeling ; Logic gates ; mHEMTs ; Microwave and submillimeter wave devices, electron transfer devices ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; microwave device modeling ; microwave monolithic integrated circuit (MMIC) ; parameter extraction ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>IEEE transactions on microwave theory and techniques, 2013-10, Vol.61 (10), p.3632-3638</ispartof><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-311893ffa8e89771477a8e627f1c39605da515ddcfe3b0f8a9f93e88cc134ac93</citedby><cites>FETCH-LOGICAL-c361t-311893ffa8e89771477a8e627f1c39605da515ddcfe3b0f8a9f93e88cc134ac93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6589159$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6589159$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27895998$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Nguyen, Tung The-Lam</creatorcontrib><creatorcontrib>Sam-Dong Kim</creatorcontrib><title>A Gate-Width Scalable Method of Parasitic Parameter Determination for Distributed HEMT Small-Signal Equivalent Circuit</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>We propose a gate-width scalable method for extracting the reliable parasitic elements of the 0.1- μm GaAs metamorphic high electron-mobility transistors. This method utilizes the de-embedding scheme for coplanar waveguide (CPW) feeding structure by considering the distributed extrinsic parasitic elements in our small-signal model. The parasitic capacitances are determined based on estimation of the sub-model (the model after de-embedding the contribution of the CPW feeding structure). We perform the parameter extraction at four different gate widths of the devices to examine the scaling effect. The model shows the best S-parameter effective fitting error of 9.85% among four different extraction methods evaluated in this study over the entire gate-width variation and in a frequency range of 0.5-110 GHz.</description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Circuit properties</subject><subject>Coplanar waveguides</subject><subject>Device modeling</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency measurement</subject><subject>high electron-mobility transistors (HEMTs)</subject><subject>Integrated circuit modeling</subject><subject>Logic gates</subject><subject>mHEMTs</subject><subject>Microwave and submillimeter wave devices, electron transfer devices</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>microwave device modeling</subject><subject>microwave monolithic integrated circuit (MMIC)</subject><subject>parameter extraction</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFPAjEQhRujiYj-AOOlF4-L7Xa7bY8EEUwgmrDG42botlKz7GJbSPz37grhMvNm5r05fAjdUzKilKinYlkUo5RQNkpToVhOLtCAci4SlQtyiQaEUJmoTJJrdBPCdzdmnMgBOozxDKJJPl0VN3iloYZ1bfDSxE1b4dbid_AQXHT6X21NNB4_93XrGoiubbBtu40L0bv1PpoKz6fLAq-2UNfJyn01UOPpz94doDZNxBPn9d7FW3RloQ7m7tSH6ONlWkzmyeJt9joZLxLNchoTRqlUzFqQRiohaCZEJ_NUWKqZygmvgFNeVdoatiZWgrKKGSm1piwDrdgQ0eNf7dsQvLHlzrst-N-SkrIHV_bgyh5ceQLXZR6PmR2Ejof10GgXzsFUSMWVkp3v4ehzxpjzOedSUa7YH7DEeAs</recordid><startdate>20131001</startdate><enddate>20131001</enddate><creator>Nguyen, Tung The-Lam</creator><creator>Sam-Dong Kim</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20131001</creationdate><title>A Gate-Width Scalable Method of Parasitic Parameter Determination for Distributed HEMT Small-Signal Equivalent Circuit</title><author>Nguyen, Tung The-Lam ; Sam-Dong Kim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-311893ffa8e89771477a8e627f1c39605da515ddcfe3b0f8a9f93e88cc134ac93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Circuit properties</topic><topic>Coplanar waveguides</topic><topic>Device modeling</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency measurement</topic><topic>high electron-mobility transistors (HEMTs)</topic><topic>Integrated circuit modeling</topic><topic>Logic gates</topic><topic>mHEMTs</topic><topic>Microwave and submillimeter wave devices, electron transfer devices</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>microwave device modeling</topic><topic>microwave monolithic integrated circuit (MMIC)</topic><topic>parameter extraction</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nguyen, Tung The-Lam</creatorcontrib><creatorcontrib>Sam-Dong Kim</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nguyen, Tung The-Lam</au><au>Sam-Dong Kim</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Gate-Width Scalable Method of Parasitic Parameter Determination for Distributed HEMT Small-Signal Equivalent Circuit</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2013-10-01</date><risdate>2013</risdate><volume>61</volume><issue>10</issue><spage>3632</spage><epage>3638</epage><pages>3632-3638</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>We propose a gate-width scalable method for extracting the reliable parasitic elements of the 0.1- μm GaAs metamorphic high electron-mobility transistors. This method utilizes the de-embedding scheme for coplanar waveguide (CPW) feeding structure by considering the distributed extrinsic parasitic elements in our small-signal model. The parasitic capacitances are determined based on estimation of the sub-model (the model after de-embedding the contribution of the CPW feeding structure). We perform the parameter extraction at four different gate widths of the devices to examine the scaling effect. The model shows the best S-parameter effective fitting error of 9.85% among four different extraction methods evaluated in this study over the entire gate-width variation and in a frequency range of 0.5-110 GHz.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2013.2279360</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on microwave theory and techniques, 2013-10, Vol.61 (10), p.3632-3638 |
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| subjects | Applied sciences Capacitance Circuit properties Coplanar waveguides Device modeling Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Frequency measurement high electron-mobility transistors (HEMTs) Integrated circuit modeling Logic gates mHEMTs Microwave and submillimeter wave devices, electron transfer devices Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits microwave device modeling microwave monolithic integrated circuit (MMIC) parameter extraction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | A Gate-Width Scalable Method of Parasitic Parameter Determination for Distributed HEMT Small-Signal Equivalent Circuit |
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