Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology

In this letter, we report a record gate delay of 1.65 ps of a current-mode logic ring oscillator (RO) fabricated with an advanced SiGe:C heterojunction bipolar transistor technology. Outstanding performance has been achieved through process and layout optimization and inductive peaking in series wit...

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Veröffentlicht in:	IEEE electron device letters 2013-10, Vol.34 (10), p.1214-1216
Hauptverfasser:	Weiss, Mario, Majek, Cedric, Sahoo, Amit Kumar, Maneux, Cristell, Mazouffre, Olivier, Chevalier, Pascal, Chantre, Alain, Zimmer, Thomas
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Delays Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Engineering Sciences Exact sciences and technology Heterojunction bipolar transistors Heterojunction bipolar transistors (HBT) Logic gates Micro and nanotechnologies Microelectronics microwave circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Oscillators, resonators, synthetizers Resistance Ring oscillators ring oscillators (ROs) semiconductor device measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium silicon germanium (SiGe) Transistors
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