Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash® after program/erase cycling
In this paper, program/erase (P/E) cycling characteristics of the novel p-type SONOS NeoFlash ® has been thoroughly discussed. The change of vertical location in the nitride and density distribution in energy span of the trapped charges after cycling has been observed. Different ONO thickness and pr...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 206 |
|---|---|
| container_issue | |
| container_start_page | 203 |
| container_title | |
| container_volume | |
| creator | Chao-Wei Kuo Chia-Jung Hsu Chun-Yuan Lo Jui-Min Kuo Wei-Min Lee Cheng-Yen Shen Wein-Town Sun |
| description | In this paper, program/erase (P/E) cycling characteristics of the novel p-type SONOS NeoFlash ® has been thoroughly discussed. The change of vertical location in the nitride and density distribution in energy span of the trapped charges after cycling has been observed. Different ONO thickness and process of nitride film results in different amount of cycling degradation. The contribution of interface traps and ONO trapped/residue-charges to P/E cycling degradation has been successfully distinguished. |
| doi_str_mv | 10.1109/IMW.2013.6582135 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6582135</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6582135</ieee_id><sourcerecordid>6582135</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-aacce7f81ac168d4b76f757a7cdbb449e89b43136a9e417ac8dbfc00ac3ca9063</originalsourceid><addsrcrecordid>eNo1kNFKwzAUhiMqOOfuBW_yAt2Spm2SyzGcDuYqTNG7cZqedpGuLUkV-gS-jQ_hk1l03pzD4ef_4DuEXHM25Zzp2erhZRoyLqZJrEIu4hNyyaNEioQnmp2SiZbq_1bhGRmFPNZBpMTrBZl4_8YYGzCJiNWIfM5rqHpvPW0K-oGuswYqWjUGOtvUFOqcZsMooaVYoyt7mlvfOZu9_-ZDqXPQtphTswdX4sCp6WPQ9S3SbbpJt3SDzbICv__-olB06GjrmtLBYYYOPFLTm8rW5RU5L6DyODnuMXle3j4t7oN1erdazNeB5TLuAgBjUBaKgxnc8iiTSSFjCdLkWRZFGpXOIsFFAhojLsGoPCsMY2CEAT04j8nNH9ci4q519gCu3x3_KH4A6bBoDQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash® after program/erase cycling</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Chao-Wei Kuo ; Chia-Jung Hsu ; Chun-Yuan Lo ; Jui-Min Kuo ; Wei-Min Lee ; Cheng-Yen Shen ; Wein-Town Sun</creator><creatorcontrib>Chao-Wei Kuo ; Chia-Jung Hsu ; Chun-Yuan Lo ; Jui-Min Kuo ; Wei-Min Lee ; Cheng-Yen Shen ; Wein-Town Sun</creatorcontrib><description>In this paper, program/erase (P/E) cycling characteristics of the novel p-type SONOS NeoFlash ® has been thoroughly discussed. The change of vertical location in the nitride and density distribution in energy span of the trapped charges after cycling has been observed. Different ONO thickness and process of nitride film results in different amount of cycling degradation. The contribution of interface traps and ONO trapped/residue-charges to P/E cycling degradation has been successfully distinguished.</description><identifier>ISSN: 2159-483X</identifier><identifier>ISBN: 9781467361682</identifier><identifier>ISBN: 1467361682</identifier><identifier>EISBN: 1467361690</identifier><identifier>EISBN: 9781467361699</identifier><identifier>DOI: 10.1109/IMW.2013.6582135</identifier><language>eng</language><publisher>IEEE</publisher><subject>charge centroid ; Degradation ; endurance ; NeoFlash ; Programming ; Silicon compounds ; SONOS ; SONOS devices ; Threshold voltage ; Tunneling</subject><ispartof>2013 5th IEEE International Memory Workshop, 2013, p.203-206</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6582135$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6582135$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chao-Wei Kuo</creatorcontrib><creatorcontrib>Chia-Jung Hsu</creatorcontrib><creatorcontrib>Chun-Yuan Lo</creatorcontrib><creatorcontrib>Jui-Min Kuo</creatorcontrib><creatorcontrib>Wei-Min Lee</creatorcontrib><creatorcontrib>Cheng-Yen Shen</creatorcontrib><creatorcontrib>Wein-Town Sun</creatorcontrib><title>Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash® after program/erase cycling</title><title>2013 5th IEEE International Memory Workshop</title><addtitle>IMW</addtitle><description>In this paper, program/erase (P/E) cycling characteristics of the novel p-type SONOS NeoFlash ® has been thoroughly discussed. The change of vertical location in the nitride and density distribution in energy span of the trapped charges after cycling has been observed. Different ONO thickness and process of nitride film results in different amount of cycling degradation. The contribution of interface traps and ONO trapped/residue-charges to P/E cycling degradation has been successfully distinguished.</description><subject>charge centroid</subject><subject>Degradation</subject><subject>endurance</subject><subject>NeoFlash</subject><subject>Programming</subject><subject>Silicon compounds</subject><subject>SONOS</subject><subject>SONOS devices</subject><subject>Threshold voltage</subject><subject>Tunneling</subject><issn>2159-483X</issn><isbn>9781467361682</isbn><isbn>1467361682</isbn><isbn>1467361690</isbn><isbn>9781467361699</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kNFKwzAUhiMqOOfuBW_yAt2Spm2SyzGcDuYqTNG7cZqedpGuLUkV-gS-jQ_hk1l03pzD4ef_4DuEXHM25Zzp2erhZRoyLqZJrEIu4hNyyaNEioQnmp2SiZbq_1bhGRmFPNZBpMTrBZl4_8YYGzCJiNWIfM5rqHpvPW0K-oGuswYqWjUGOtvUFOqcZsMooaVYoyt7mlvfOZu9_-ZDqXPQtphTswdX4sCp6WPQ9S3SbbpJt3SDzbICv__-olB06GjrmtLBYYYOPFLTm8rW5RU5L6DyODnuMXle3j4t7oN1erdazNeB5TLuAgBjUBaKgxnc8iiTSSFjCdLkWRZFGpXOIsFFAhojLsGoPCsMY2CEAT04j8nNH9ci4q519gCu3x3_KH4A6bBoDQ</recordid><startdate>201305</startdate><enddate>201305</enddate><creator>Chao-Wei Kuo</creator><creator>Chia-Jung Hsu</creator><creator>Chun-Yuan Lo</creator><creator>Jui-Min Kuo</creator><creator>Wei-Min Lee</creator><creator>Cheng-Yen Shen</creator><creator>Wein-Town Sun</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201305</creationdate><title>Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash® after program/erase cycling</title><author>Chao-Wei Kuo ; Chia-Jung Hsu ; Chun-Yuan Lo ; Jui-Min Kuo ; Wei-Min Lee ; Cheng-Yen Shen ; Wein-Town Sun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-aacce7f81ac168d4b76f757a7cdbb449e89b43136a9e417ac8dbfc00ac3ca9063</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>charge centroid</topic><topic>Degradation</topic><topic>endurance</topic><topic>NeoFlash</topic><topic>Programming</topic><topic>Silicon compounds</topic><topic>SONOS</topic><topic>SONOS devices</topic><topic>Threshold voltage</topic><topic>Tunneling</topic><toplevel>online_resources</toplevel><creatorcontrib>Chao-Wei Kuo</creatorcontrib><creatorcontrib>Chia-Jung Hsu</creatorcontrib><creatorcontrib>Chun-Yuan Lo</creatorcontrib><creatorcontrib>Jui-Min Kuo</creatorcontrib><creatorcontrib>Wei-Min Lee</creatorcontrib><creatorcontrib>Cheng-Yen Shen</creatorcontrib><creatorcontrib>Wein-Town Sun</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chao-Wei Kuo</au><au>Chia-Jung Hsu</au><au>Chun-Yuan Lo</au><au>Jui-Min Kuo</au><au>Wei-Min Lee</au><au>Cheng-Yen Shen</au><au>Wein-Town Sun</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash® after program/erase cycling</atitle><btitle>2013 5th IEEE International Memory Workshop</btitle><stitle>IMW</stitle><date>2013-05</date><risdate>2013</risdate><spage>203</spage><epage>206</epage><pages>203-206</pages><issn>2159-483X</issn><isbn>9781467361682</isbn><isbn>1467361682</isbn><eisbn>1467361690</eisbn><eisbn>9781467361699</eisbn><abstract>In this paper, program/erase (P/E) cycling characteristics of the novel p-type SONOS NeoFlash ® has been thoroughly discussed. The change of vertical location in the nitride and density distribution in energy span of the trapped charges after cycling has been observed. Different ONO thickness and process of nitride film results in different amount of cycling degradation. The contribution of interface traps and ONO trapped/residue-charges to P/E cycling degradation has been successfully distinguished.</abstract><pub>IEEE</pub><doi>10.1109/IMW.2013.6582135</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2159-483X |
| ispartof | 2013 5th IEEE International Memory Workshop, 2013, p.203-206 |
| issn | 2159-483X |
| language | eng |
| recordid | cdi_ieee_primary_6582135 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | charge centroid Degradation endurance NeoFlash Programming Silicon compounds SONOS SONOS devices Threshold voltage Tunneling |
| title | Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash® after program/erase cycling |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T10%3A46%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Analysis%20of%20vertical%20location%20and%20bandgap%20energy%20distribution%20of%20trapped%20charges%20on%20P-type%20SONOS%20NeoFlash%C2%AE%20after%20program/erase%20cycling&rft.btitle=2013%205th%20IEEE%20International%20Memory%20Workshop&rft.au=Chao-Wei%20Kuo&rft.date=2013-05&rft.spage=203&rft.epage=206&rft.pages=203-206&rft.issn=2159-483X&rft.isbn=9781467361682&rft.isbn_list=1467361682&rft_id=info:doi/10.1109/IMW.2013.6582135&rft_dat=%3Cieee_6IE%3E6582135%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1467361690&rft.eisbn_list=9781467361699&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6582135&rfr_iscdi=true |