Fabrication of High-Performance ZnO Thin-Film Transistors With Submicrometer Channel Length

A method was developed to fabricate ZnO thin-film transistors (TFTs) with submicrometer channel length. In this scheme, mature process techniques are used to form a suspending hardmask bridge on the wafer surface, which enables the subsequent construction of a TFT by the sequential deposition of gat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 2013-09, Vol.34 (9), p.1160-1162
Hauptverfasser:	LIN, Horng-Chih, LYU, Rong-Jhe, HUANG, Tiao-Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bridges Electronics Exact sciences and technology Fabrication Logic gates Metal oxide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices shadow mask submicrometer Substrates Thin film transistors Transistors Zinc oxide ZnO
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!