First demonstration of a full 28nm high-k/metal gate circuit transfer from Bulk to UTBB FDSOI technology through hybrid integration

For the first time a full hybrid integration scheme is proposed, allowing a full circuit design transfer from 28nm Bulk CMOS high-k/metal gate onto UTBB FDSOI with minimum design effort. As the performance of FDSOI logic and SRAM devices have already been reported, this paper highlights the original...

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Bibliographische Detailangaben

Hauptverfasser:	Golanski, D., Fonteneau, P., Fenouillet-Beranger, C., Cros, A., Monsieur, F., Guitard, N., Legrand, C-A, Dray, A., Richier, C., Beckrich, H., Mora, P., Bidal, G., Weber, O., Saxod, O., Manouvrier, J-R, Galy, P., Planes, N., Arnaud, F.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electrostatic discharges Implants Junctions Logic gates MOSFET Performance evaluation Thyristors
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