Analytical potential distribution model of symmetric double gate underlap MOSFET with binary metal alloy as gate electrode for subdued sces

In this work, we have used the novel concept of linearly graded binary alloy, as gate material in the popular structure of underlap symmetric Double Gate (DG) MOSFET and developed an analytical model to study the potential distribution in the gate overlap and underlap of our proposed structure. Base...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sarkhel, Saheli, Manna, Bibhas, Jana, Anindya, Naskar, Kousik, Sarkar, Subir Kumar
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models DG MOS DIBL Electric potential gate underlap Logic gates Metals MOSFET SCEs Silicon Work Function Engineered Gate (WFEG)
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!