Low temperature (<180°C) wafer-level and chip-level In-to-Cu and Cu-to-Cu bonding for 3D integration

Two bonded structures, Cu/In bonding and Cu-Cu bonding with Ti passivation, were investigated for the application of 3D interconnects. For Cu/In bonding, the bonds were achieved at 170°C due to the isothermal solidification. The intermetallic compounds formed in the joint was Cu 2 In phase. For anot...

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Bibliographische Detailangaben

Hauptverfasser:	Yu-San Chien, Yan-Pin Huang, Ruoh-Ning Tzeng, Ming-Shaw Shy, Teu-Hua Lin, Kou-Hua Chen, Ching-Te Chuang, Wei Hwang, Jin-Chern Chiou, Chi-Tsung Chiu, Ho-Ming Tong, Kuan-Neng Chen
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Adhesives Materials Nickel Passivation Resistance Surface morphology
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