Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration
We show that room temperature bonding of a 332 × 268 bump array can be realized by using ultrasonic bonding of cone-shaped bump. 25 μm-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. A conventional planar electrode made of electrop...
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| creator | Shuto, Takanori Iwanabe, Keiichiro Li Jing Qiu Asano, Tanemasa |
| description | We show that room temperature bonding of a 332 × 268 bump array can be realized by using ultrasonic bonding of cone-shaped bump. 25 μm-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. A conventional planar electrode made of electroplated Au was used as the counter electrode. Ultrasonic bonding was carried out at room temperature in ambient air. Electrical connection test shows all bump connections with low resistance have been achieved. Heterogeneous integration of a photodiode array on InP and Si CMOS readout IC is demonstrated. |
| doi_str_mv | 10.1109/ECTC.2013.6575717 |
| format | Conference Proceeding |
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A conventional planar electrode made of electroplated Au was used as the counter electrode. Ultrasonic bonding was carried out at room temperature in ambient air. Electrical connection test shows all bump connections with low resistance have been achieved. Heterogeneous integration of a photodiode array on InP and Si CMOS readout IC is demonstrated.</description><subject>Acoustics</subject><subject>Arrays</subject><subject>Bonding</subject><subject>Electrodes</subject><subject>Gold</subject><subject>Indium phosphide</subject><subject>Silicon</subject><issn>0569-5503</issn><issn>2377-5726</issn><isbn>9781479902330</isbn><isbn>1479902330</isbn><isbn>1479902322</isbn><isbn>9781479902323</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kM1qwzAQhNU_aJLmAUovegG7K8my7GMx6Q8ECiU9B0leOyqxlMr2IW9fp01PA7uz3zJDyD2DlDEoH1fVpko5MJHmUknF1AWZs0yVJXDB-SWZcaFUIhXPr8iyVMX_TsA1mYHMy0RKELdk3vdfABkAK2bk-yOELhmwO2DUwxiR7ly7S2r0vRuO1PkBow3eox1c8HTsnW_puB-i7oN3lprg69MoNHSyITVjd6BNiHSH02Vo0WMY-19OOz2YGHfkptH7HpdnXZDP59Wmek3W7y9v1dM6cTxjQ8Jzg6zh0EilMRPWSMhFXYC2ElSDDdciKzRYm7PCGKOybMpzClsrWwNHsSAPf1yHiNtDdJ2Ox-25OvED0IRhbw</recordid><startdate>201305</startdate><enddate>201305</enddate><creator>Shuto, Takanori</creator><creator>Iwanabe, Keiichiro</creator><creator>Li Jing Qiu</creator><creator>Asano, Tanemasa</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201305</creationdate><title>Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration</title><author>Shuto, Takanori ; Iwanabe, Keiichiro ; Li Jing Qiu ; Asano, Tanemasa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i241t-26be1f20f57ae43cb5063d80ac507fef2a348a0cc618bbb7440182330d7cd02e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Acoustics</topic><topic>Arrays</topic><topic>Bonding</topic><topic>Electrodes</topic><topic>Gold</topic><topic>Indium phosphide</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Shuto, Takanori</creatorcontrib><creatorcontrib>Iwanabe, Keiichiro</creatorcontrib><creatorcontrib>Li Jing Qiu</creatorcontrib><creatorcontrib>Asano, Tanemasa</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shuto, Takanori</au><au>Iwanabe, Keiichiro</au><au>Li Jing Qiu</au><au>Asano, Tanemasa</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration</atitle><btitle>2013 IEEE 63rd Electronic Components and Technology Conference</btitle><stitle>ECTC</stitle><date>2013-05</date><risdate>2013</risdate><spage>1141</spage><epage>1145</epage><pages>1141-1145</pages><issn>0569-5503</issn><eissn>2377-5726</eissn><isbn>9781479902330</isbn><isbn>1479902330</isbn><eisbn>1479902322</eisbn><eisbn>9781479902323</eisbn><abstract>We show that room temperature bonding of a 332 × 268 bump array can be realized by using ultrasonic bonding of cone-shaped bump. 25 μm-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. A conventional planar electrode made of electroplated Au was used as the counter electrode. Ultrasonic bonding was carried out at room temperature in ambient air. Electrical connection test shows all bump connections with low resistance have been achieved. Heterogeneous integration of a photodiode array on InP and Si CMOS readout IC is demonstrated.</abstract><pub>IEEE</pub><doi>10.1109/ECTC.2013.6575717</doi><tpages>5</tpages></addata></record> |
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| language | eng |
| recordid | cdi_ieee_primary_6575717 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Acoustics Arrays Bonding Electrodes Gold Indium phosphide Silicon |
| title | Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration |
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