TSV-based quartz crystal resonator using 3D integration and Si packaging technologies
In this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1...
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creator | Jian-Yu Shih Yen-Chi Chen Cheng-Hao Chiang Chih-Hung Chiu Yu-Chen Hu Chung-Lun Lo Chi-Chung Chang Kuan-Neng Chen |
description | In this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the electrical connection of the signal electrode on the quartz blank. The quartz blank is protected by the simultaneous formation of strength reinforcement and excellent sealing capacity of thin-film Cu/Sn eutectic bonding. With the well fabrication and the enhanced structure, excellent leakage results in the MIL-STD-883 hermetic test (8.5*10 -9 ~1*10 -8 Pa m 3 /sec by He leak detector) show the crystal resonator using 3D integration has the great performance and manufacturability to replace the conventional metal or ceramic enclosures for the next generation products. |
doi_str_mv | 10.1109/ECTC.2013.6575635 |
format | Conference Proceeding |
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The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the electrical connection of the signal electrode on the quartz blank. The quartz blank is protected by the simultaneous formation of strength reinforcement and excellent sealing capacity of thin-film Cu/Sn eutectic bonding. With the well fabrication and the enhanced structure, excellent leakage results in the MIL-STD-883 hermetic test (8.5*10 -9 ~1*10 -8 Pa m 3 /sec by He leak detector) show the crystal resonator using 3D integration has the great performance and manufacturability to replace the conventional metal or ceramic enclosures for the next generation products.</description><identifier>ISSN: 0569-5503</identifier><identifier>ISBN: 9781479902330</identifier><identifier>ISBN: 1479902330</identifier><identifier>EISSN: 2377-5726</identifier><identifier>EISBN: 1479902322</identifier><identifier>EISBN: 9781479902323</identifier><identifier>DOI: 10.1109/ECTC.2013.6575635</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bonding ; Cavity resonators ; Crystals ; Silicon ; Through-silicon vias ; Tin</subject><ispartof>2013 IEEE 63rd Electronic Components and Technology Conference, 2013, p.599-604</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6575635$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6575635$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jian-Yu Shih</creatorcontrib><creatorcontrib>Yen-Chi Chen</creatorcontrib><creatorcontrib>Cheng-Hao Chiang</creatorcontrib><creatorcontrib>Chih-Hung Chiu</creatorcontrib><creatorcontrib>Yu-Chen Hu</creatorcontrib><creatorcontrib>Chung-Lun Lo</creatorcontrib><creatorcontrib>Chi-Chung Chang</creatorcontrib><creatorcontrib>Kuan-Neng Chen</creatorcontrib><title>TSV-based quartz crystal resonator using 3D integration and Si packaging technologies</title><title>2013 IEEE 63rd Electronic Components and Technology Conference</title><addtitle>ECTC</addtitle><description>In this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the electrical connection of the signal electrode on the quartz blank. The quartz blank is protected by the simultaneous formation of strength reinforcement and excellent sealing capacity of thin-film Cu/Sn eutectic bonding. With the well fabrication and the enhanced structure, excellent leakage results in the MIL-STD-883 hermetic test (8.5*10 -9 ~1*10 -8 Pa m 3 /sec by He leak detector) show the crystal resonator using 3D integration has the great performance and manufacturability to replace the conventional metal or ceramic enclosures for the next generation products.</description><subject>Bonding</subject><subject>Cavity resonators</subject><subject>Crystals</subject><subject>Silicon</subject><subject>Through-silicon vias</subject><subject>Tin</subject><issn>0569-5503</issn><issn>2377-5726</issn><isbn>9781479902330</isbn><isbn>1479902330</isbn><isbn>1479902322</isbn><isbn>9781479902323</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMtOwzAUBc1Loi39AMTGP5Bi-8ZxvEShPKRKLNqyrW5sJxhCUmx3Ub6-IMpqFiONjg4h15zNOGf6dl6tqplgHGaFVLIAeULGPFdaMwFCnJKRAKUyqURxRqZalf8O2DkZMVnoTEoGl2Qc4ztjOWO8HJH1avma1RidpV87DOmbmrCPCTsaXBx6TEOgu-j7lsI99X1ybcDkh55ib-nS0y2aD2x_fXLmrR-6ofUuXpGLBrvopkdOyPphvqqessXL43N1t8g8VzJlorZcGIbWlE7Uqi65KyE3zKJGDlD8rC-ldHlemEblDRihUGkr0EqsrQGYkJu_rnfObbbBf2LYb473wAEjCVW8</recordid><startdate>201305</startdate><enddate>201305</enddate><creator>Jian-Yu Shih</creator><creator>Yen-Chi Chen</creator><creator>Cheng-Hao Chiang</creator><creator>Chih-Hung Chiu</creator><creator>Yu-Chen Hu</creator><creator>Chung-Lun Lo</creator><creator>Chi-Chung Chang</creator><creator>Kuan-Neng Chen</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201305</creationdate><title>TSV-based quartz crystal resonator using 3D integration and Si packaging technologies</title><author>Jian-Yu Shih ; Yen-Chi Chen ; Cheng-Hao Chiang ; Chih-Hung Chiu ; Yu-Chen Hu ; Chung-Lun Lo ; Chi-Chung Chang ; Kuan-Neng Chen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-2bd12c0adc8e2b7b81e834c0da9a1336902855e446cf74f3c27a79d2ad5abdc33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Bonding</topic><topic>Cavity resonators</topic><topic>Crystals</topic><topic>Silicon</topic><topic>Through-silicon vias</topic><topic>Tin</topic><toplevel>online_resources</toplevel><creatorcontrib>Jian-Yu Shih</creatorcontrib><creatorcontrib>Yen-Chi Chen</creatorcontrib><creatorcontrib>Cheng-Hao Chiang</creatorcontrib><creatorcontrib>Chih-Hung Chiu</creatorcontrib><creatorcontrib>Yu-Chen Hu</creatorcontrib><creatorcontrib>Chung-Lun Lo</creatorcontrib><creatorcontrib>Chi-Chung Chang</creatorcontrib><creatorcontrib>Kuan-Neng Chen</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jian-Yu Shih</au><au>Yen-Chi Chen</au><au>Cheng-Hao Chiang</au><au>Chih-Hung Chiu</au><au>Yu-Chen Hu</au><au>Chung-Lun Lo</au><au>Chi-Chung Chang</au><au>Kuan-Neng Chen</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>TSV-based quartz crystal resonator using 3D integration and Si packaging technologies</atitle><btitle>2013 IEEE 63rd Electronic Components and Technology Conference</btitle><stitle>ECTC</stitle><date>2013-05</date><risdate>2013</risdate><spage>599</spage><epage>604</epage><pages>599-604</pages><issn>0569-5503</issn><eissn>2377-5726</eissn><isbn>9781479902330</isbn><isbn>1479902330</isbn><eisbn>1479902322</eisbn><eisbn>9781479902323</eisbn><abstract>In this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the electrical connection of the signal electrode on the quartz blank. The quartz blank is protected by the simultaneous formation of strength reinforcement and excellent sealing capacity of thin-film Cu/Sn eutectic bonding. With the well fabrication and the enhanced structure, excellent leakage results in the MIL-STD-883 hermetic test (8.5*10 -9 ~1*10 -8 Pa m 3 /sec by He leak detector) show the crystal resonator using 3D integration has the great performance and manufacturability to replace the conventional metal or ceramic enclosures for the next generation products.</abstract><pub>IEEE</pub><doi>10.1109/ECTC.2013.6575635</doi><tpages>6</tpages></addata></record> |
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subjects | Bonding Cavity resonators Crystals Silicon Through-silicon vias Tin |
title | TSV-based quartz crystal resonator using 3D integration and Si packaging technologies |
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