A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches

This paper presents a 7T near-threshold SRAM with design techniques for improving cell stability and energy efficiency. The proposed write through virtual ground (WTVG) scheme decreases the period of write disturbance by 6.1×. A PVT tracking sensing scheme is presented to track variation and sense s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yuan Lin Yeoh, Bo Wang, Xiangyao Yu, Kim, Tony T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuit stability Computer architecture Microprocessors Sensors SRAM cells Thermal stability
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